In this work, hydrothermal synthesis of heavy metal (tungsten) based transition metal dichalcogenide (TMDC) with improved sensing phenomenon has been reported. WSe_2 micro/nanorods were synthesized using electronics graded chemicals. After successful synthesis process the material containing micro/nanorods and particles was characterized using SEM, X-ray diffraction, and Raman spectroscopy. Inorder to fabricate the device, 190 nm SiO_2 were grown over 2 inch p-type Si substrate were grown using thermal oxidation and thickness was confirmed using ellipsometry. Synthesized micro/nanorods were dispersed over SiO_2/p-Si substrate and using one step lithography process 100 nm Au contacts were realized using sputtering method. Structural and electrical characterization of the device is carried out. I-V characteristics of the device carried to evaluate the voltage handing capability. The main aspect of the work was to test the device as low concentration gas sensor. A setup was developed and F_2 gas concentration ranging from 0.5 ppm to 20 ppm was introduced in camber containing the sensor. Dynamic response of the device showed abrupt current shift of 2.6 nA/ppm at optimal temperature of 50°C. The sensor has high and rapid response with good reproducibility.
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机译：在这项工作中，已经报道了具有改善的感测现象的重金属（钨）的过渡金属二甲胺化物（TMDC）的水热合成。使用电子分级化学物质合成WSE_2微/纳米棒。在成功合成过程之后，使用SEM，X射线衍射和拉曼光谱表征含有微/纳米棒和颗粒的材料。为了制造该装置，使用热氧化和使用椭偏测量，生长190nm siO_2以超过2英寸的Si Si衬底生长。合成的微/纳米棒通过SiO_2 / P-Si衬底分散，使用一步光刻过程100nm使用溅射方法实现触点。进行装置的结构和电学表征。用于评估电压处理能力的设备的I-V特性。工作的主要方面是将该装置测试为低浓度气体传感器。开发了一个设置，在含有传感器的旁角引入了0.5ppm至20ppm的F_2气体浓度。该器件的动态响应显示在最佳温度为50°C时突然显示2.6 NA / PPM。传感器具有高且快速的响应，再现性良好。
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