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Checking design conformance and optimizing manufacturability using automated Double Patterning decomposition

机译：使用自动Double Patterning分解检查设计一致性并优化可制造性

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Delays in equipment availability for both Extreme UV and High index immersion have led to a growing interest in double patterning as a suitable solution for the 22nm logic node. Double patterning involves decomposing a layout into two masking layers that are printed and etched separately so as to provide the intrinsic manufacturability of a previous lithography node with the pitch reduction of a more aggressive node. Most 2D designs cannot be blindly shrunk to run automatically on a double patterning process and so a set of guidelines for how to layout for this type of flow is needed by designers. While certain classes of layout can be clearly identified and avoided based on short range interactions, compliance issues can also extend over large areas of the design and are hard to recognize. This means certain design practices should be implemented to provide suitable breaks or performed with layout tools that are double patterning compliance aware. The most striking set of compliance errors result in layout on one of the masks that is at the minimum design space rather than the relaxed space intended. Another equally important class of compliance errors is that related to marginal printability, be it poor wafer overlap and/or poor process window (depth of focus, dose latitude, MEEF, overlay). When decomposing a layout the tool is often presented with multiple options for where to cut the design thereby defining an area of overlap between the different printed layers. While these overlap areas can have markedly different topologies (for instance the overlap may occur on a straight edge or at a right angled corner), quantifying the quality of a given overlap ensures that more robust decomposition solutions can be chosen over less robust solutions. Layouts which cannot be decomposed or which can only be decomposed with poor manufacturability need to be highlighted to the designer, ideally with indications on how best to resolve this issue. This paper uses an internally developed automated double pattern decomposition tool to investigate design compliance and describes a number of classes of non-conforming layout. Tool results then provide help to the designer to achieve robust design compliant layout.
机译：极紫外和高折射率浸没设备可用性的延迟已经引起人们对双重图案作为22nm逻辑节点的合适解决方案的兴趣日益浓厚。双重图案化涉及将布局分解成两个分别印刷和蚀刻的掩模层，从而提供先前光刻节点的固有可制造性，同时降低侵蚀性节点的节距。大多数2D设计不能盲目地缩小以在双重图案化过程中自动运行，因此设计人员需要一套有关如何为这种类型的流程进行布局的准则。虽然可以基于短距离交互来明确识别和避免某些类别的布局，但合规性问题也可能会扩展到设计的较大区域，并且难以识别。这意味着应实施某些设计实践以提供适当的中断，或使用具有双图案合规性意识的布局工具来执行这些设计实践。最引人注目的一组合规性错误导致在一个掩模上的布局处于最小设计空间，而不是预期的宽松空间。顺从性错误的另一个同等重要的类别是与边缘可印刷性有关的错误，无论是较差的晶圆重叠和/或较差的处理窗口（聚焦深度，剂量范围，MEEF，覆盖层）。分解布局时，通常会向工具提供在哪里切割设计的多个选​​项，从而定义不同印刷层之间的重叠区域。尽管这些重叠区域可能具有明显不同的拓扑结构（例如，重叠可能发生在直边或直角拐角处），但对给定重叠的质量进行量化可确保可以选择更鲁棒的分解解决方案，而不是较不鲁棒的解决方案。必须向设计者强调不能分解或只能以较低的可制造性分解的布局，理想情况下应标出如何最好地解决此问题的指示。本文使用内部开发的自动双模式分解工具来调查设计的符合性，并描述了许多类别的不合格布局。然后，工具结果可为设计人员提供帮助，以实现稳健的设计兼容布局。

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