• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on VLSI Technology >Comprehensive understanding of surface roughness limited mobility in unstrained- and strained-Si MOSFETs by novel characterization scheme of Si/SiO2 interface roughness
【24h】

Comprehensive understanding of surface roughness limited mobility in unstrained- and strained-Si MOSFETs by novel characterization scheme of Si/SiO2 interface roughness

机译：通过Si / SiO 2 界面粗糙度的新颖表征方案，综合了解表面粗糙度有限的流动性和应变-SI MOSFET

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, a novel method to determine the surface roughness-limited mobilities (musr) of electrons and holes in MOSFETs directly from experimental data of MOS interface roughness is proposed and compared with experimental musr with and without bi-axial tensile strain. This method includes the direct evaluation of the scattering potential from the power spectra of Si/SiO2 interface roughness data, which are taken through high resolution advanced TEM measurements, without assuming any autocorrelation function form like Gaussian or exponential. It is found, for the first time, that, by employing the present method, the amount of the calculated electron and hole musr and the strain dependencies are in a systematic agreement with the experimental ones. As a result, the difference in the strain dependence between electrons and holes is found to be attributed to the change in spatial waveform of the roughness by oxidizing Si surfaces with tensile strain.
机译：在本文中，提出了一种新的方法，以直接从MOS界面粗糙度的实验数据中确定电子和孔中电子和孔中的表面粗糙度限制迁移率（MU SR ）的新方法，并与实验MU 进行比较Sr 具有和不具有双轴拉伸菌株。该方法包括通过高分辨率高级TEM测量的Si / SiO 2 界面粗糙度数据的功率谱的直接评估，其通过高分辨率高级TEM测量，而不假设任何自相关函数形式，如高斯或指数。首次发现，通过采用本方法，计算的电子和孔MU Sr 和应变依赖性的量是与实验性的系统协议。结果，发现电子和孔之间的应变依赖性的差异被归因于通过用拉伸应变氧化Si表面来归因于粗糙度的空间波形的变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号