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3D AFM Method for Characterization of Resist Effect of Aerial Image Contrast on Side Wall Roughness

机译:用于抗蚀作用的抗蚀作用对侧壁粗糙度的抗蚀作用

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We characterized the roughness and side wall morphology of lithographically produced nanostructures of resist-multilayer materials using the recently developed three-dimensional atomic force microscopy (3D-AFM), which has an independent Z scanner intentionally tilted to a certain angle access the sidewall. In order to produce different degrees of Line Edge Roughness (LER) in a given photoresist sample, we systematically varied the Aerial Image Contrast (AIC) at a constant dose for optically imaged resists. We describe herein the effects of AIC on KrF resists that were observed by using 3D-AFM and Critical Dimension-Scanning Electron Microscopy (CD-SEM). High-resolution sidewall images and line profiles obtained by the 3D-AFM technique demonstrate its advantages to characterize the shape and roughness of device patterns throughout the development and pattern transfer process. Taken together, we demonstrate that AFM imaging can identify a trend in Sidewall Roughness (SWR) as a function of AIC effects on photoresist sample, and CD-SEM imaging provided supporting evidence to establish the LER trend.
机译:我们用最近开发的三维原子力显微镜(3D-AFM)表征了抗蚀剂 - 多层材料的粗糙度和侧壁形态的粗糙度和侧壁形态,其具有故意倾斜到侧壁的一定角度的独立Z扫描仪。为了在给定的光致抗蚀剂样品中产生不同程度的线边缘粗糙度(LER),我们系统地改变了用于光学成像抗蚀剂的恒定剂量的空中图像对比(AIC)。我们在此描述通过使用3D-AFM和临界尺寸扫描电子显微镜观察(CD-SEM)观察到的AIC对KRF抗蚀剂的影响。通过3D-AFM技术获得的高分辨率侧壁图像和线谱证明其在整个开发和模式转移过程中表征装置图案的形状和粗糙度的优点。我们携带在一起,我们证明AFM成像可以识别侧壁粗糙度(SWR)的趋势,作为对光致抗蚀剂样品的AIC效应的函数,以及CD-SEM成像提供支持证据来建立LER趋势。

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