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首页> 外文会议>European Mask and Lithography Conference >ALTA~reg; 4700 system mask patterning performance improvements for X-Architecture and wafer electrical performance interchangeability with 50kV E-beam
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ALTA~reg; 4700 system mask patterning performance improvements for X-Architecture and wafer electrical performance interchangeability with 50kV E-beam

机译：Alta~®4700系统屏蔽图案化性能改进X架构和晶圆电气性能互换性，具有50kV电子束

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The capability and performance of the production-proven DUV ALTA~® 4300 system has been extended by the development of two new optical subsystems: a 0.9 NA, 42X reduction lens and a high-bandwidth acousto-optic deflector based beam position and intensity correction servo. The PSM overlay performance has been improved by modifications to the software algorithms. The enhanced performance, delivered by these subsystem improvements, has been introduced as a new product - the ALTA 4700. Characterization data show unproved resolution performance in line end shortening, through pitch CD bias and feature corner acuity. The AOD subsystem reduces stripe beam placement errors and random and systematic beam intensity errors. This has enabled local CD uniformity to be reduced to 4.3 nm (3σ) and global CD uniformity to be reduced to 6 nm (3σ). Second layer overlay performance is now 20 nm (max error). This paper also demonstrates superior X-Architecture performance delivered by the ALTA 4700. Characterization data show global CD uniformity in 0°, 45°, 90°, and 135° orientations better than 6.5nm (3σ); mean CD control in all 4 orientations less than 3.6nm; and smooth angled lines through a wide range of angles. A split lot wafer evaluation demonstrates the equivalence of wafers produced DUV ALTA system reticles vs. those produced with reticles from a 50kV electron beam system. The evaluation shows the interchangeability of these two systems for 90nm Metal 1 applications - with no changes to the wafer OPC (originally optimized for the 50kV system). Characterization data focus on final wafer electrical performance - the performance characteristic that determines ultimate integrated circuit device yield.
机译：通过两种新光学子系统的开发，生产验证的Duv Alta〜®4300系统的能力和性能已延长：0.9 NA，42倍还原镜头和高带宽声光导板的基于光束位置和强度校正伺服。通过对软件算法的修改，PSM覆盖性能已得到改进。通过这些子系统改进提供的增强性能已被引入为新产品 - Alta 4700.表征数据显示出直线结束缩短，通过俯仰CD偏置和特征角敏锐度的未经制作的分辨率性能。 AOD子系统可减少条带梁放置误差和随机和系统的光束强度误差。这使得能够将局部CD均匀性降低至4.3nm（3σ）和全局CD均匀性，以减少到6nm（3σ）。第二层覆盖性能现在为20 nm（最大错误）。本文还展示了ALTA 4700提供的卓越的X架构性能。表征数据在0°，45°，90°和135°定向上显示全局CD均匀性，优于6.5nm（3σ）;在所有4方向上的平均CD控制小于3.6nm;通过各种角度光滑的倾斜线。分裂批次评估演示了晶片的等价，产生的Duv Alta系统掩模与来自50kV电子束系统的掩模产生的那些。评价结果显示这两种系统对90nm的金属1级的应用程序的互换性 - 在不改变晶片OPC（最初为50kV的系统优化）。表征数据专注于最终晶片电性能 - 确定最终集成电路器件产量的性能特性。

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