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Challenges amp; Solutions for High Volume Production in SiGe BICMOS amp; CMOS Technologies for High-Frequency and Optical Communications

机译:高频和光学通信中SIGE BICMOS和CMOS技术大量生产挑战与解决方案

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This paper presents the main results of advanced BICMOS and CMOS technologies able to address new challenges in high speed optical and wireless communications for customer products and markets. Typically smart phones, smart cars, IoT and WLC massive data transfer are in our daily life. Thus, features and performances of active and passive devices on bulk and UTBB FDSOI technologies are discussed. Process, device topologies and RF characterizations of state of the art SiGe HBT BiCMOS55 and MOS transistors are mainly shown even for low power applications. Moreover, to reach high volume production, the Electro-Static Discharge (ESD) high frequency protection is one key contributor in this frame. This last point will be focused in term of generic approaches and solutions for integrated circuit designers.
机译:本文介绍了先进的BICMOS和CMOS技术的主要结果,能够为客户产品和市场提供高速光学和无线通信的新挑战。通常智能手机,智能汽车,物联网和WLC大规模数据传输都在我们的日常生活中。因此,讨论了在批量和UTBB FDSOI技术上的主动和无源设备的特征和性能。甚至用于低功率应用,主要示出了最先进的SiGe HBT BICMOS55和MOS晶体管的装置,装置拓扑结构和RF表征。此外,为了达到大批量生产,电静电放电(ESD)高频保护是该框架中的一个关键贡献者。最后一点将集中于集成电路设计人员的通用方法和解决方案。

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