BiCMOS integrated circuits; Ge-Si alloys; Internet of Things; MOSFET; electronic equipment manufacture; electrostatic discharge; heterojunction bipolar transistors; integrated circuit design; integrated circuit manufacture; low-power electronics; mobile radio; optical communication equipment; silicon-on-insulator; ESD; IoT; MOS transistors; SiGe; SiGe BICMOS technologies; SiGe HBT BiCMOS55; UTBB FDSOI technologies; WLC; active devices; data transfer; electrostatic discharge; high volume production; high-frequency communications; integrated circuit design; low power applications; optical communications; passive devices; smart cars; smart phones; wireless communications; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Heterojunction bipolar transistors; Radio frequency; Silicon germanium;
机译:采用0.35μmSiGe BICMOS技术的宽带差分互阻放大器,用于10 Gbit / s光纤前端
机译:采用0.18- $ muhbox m $ SiGe BiCMOS技术的40GSamples / s保持放大器的设计方法
机译:采用0.18- $ muhbox m $ SiGe BiCMOS技术的40GSamples / s保持放大器的设计方法
机译:高频和光学通信中SIGE BICMOS和CMOS技术大量生产挑战与解决方案
机译:用于光通信变送器的SiGe BICMOS集成电路=光学通信变送器的SiGe BICMOS集成电路
机译:用于粘度测量的BiCMOS介电传感器的设计和制造:早期检测COPD的可能解决方案
机译:集成DC-DC转换器设计,用于改善siGe BiCmOs技术中的WCDma功率放大器效率