Collector Ideality Factor and Emitter-Base Tunneling Energy at InP/InGaAs Heteroj unction Bipolar Transistors

机译：InP / Ingaas Heteroj Popolar晶体管的集电器理想因子和发射极隧道能量

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The I_c, I_B-Gummel plots (1) are extensively used (2-7) for the characterization of the heterojunction bipolar transistors and monitoring of process parameters and device reliability. Usually, the collector current is written as I_C=I_0exp{(qV_(BE)/(nkT)} [1] for junction voltages V_(Be) ≥ 0.2 V and V_(Bc) = 0 V. The saturation current I_0 and ideality factor n are not dependent on emitter-base voltage V_(BE). In the thermionic theory given by Grinberg et al. (8), n gets the value

机译：I_C，I_B-Gummel Plots（1）广泛使用（2-7），以表征异质结双极晶体管和处理参数和设备可靠性的监控。通常，收集电流被写为i_c = i_0exp {（qv_（be）/（nkt）} [1]用于结电压V_（be）≥0.2v和v_（bc）= 0 V.饱和度电流i_0和理想性因子n不依赖于发射极限电压V_（be）。在GRINBERG等人给出的热离子理论中。（8），n获得该价值

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《Symposium on microelectronics technology and devices》|2010年||共8页
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D. Sachelarie; G. Predusca;
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1. Temperature studies of InAlAs-InGaAs-InAlAs double heteroj unction bipolar transistors with no current blocking [J] . M Mohiuddin, T Tauqeer, J Sexton, Semiconductor science and technology . 2010,第7期

机译：无电流阻塞的InAlAs-InGaAs-InAlAs双异质结双极晶体管的温度研究
2. Influence of launching energy on collector transport in InP/InGaAs double-heterojunction bipolar transistors [J] . Kurishima K., Kobayashi T. IEEE Transactions on Electron Devices . 1993,第11期

机译：发射能量对InP / InGaAs双异质结双极晶体管中集电极输运的影响
3. InP-based hetero/unction bipolar transistors with InGaAs/GaAs strained-layer-superlattice [J] . R. Driad, R. Aidam, Q. Yang, Applied Physics Letters . 2011,第4期

机译：具有InGaAs / GaAs应变层超晶格的基于InP的异质/结合双极晶体管
4. Collector Ideality Factor and Emitter-Base Tunneling Energy at InP/InGaAs Heteroj unction Bipolar Transistors [C] . D. Sachelarie, G. Predusca Microelectronics technology and devices - SBMicro 2010 . 2010

机译：InP / InGaAs异质结双极晶体管的集电极理想因子和发射极基隧穿能
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors [O] . Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck, -1

机译：少量磷光体：隧道晶体管的理想二维材料
7. Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors [O] . Lo HB, Yang ES, Yang YF, 1999

机译：GaInp / Gaas异质结和异质结构 - 发射极双极晶体管的电流增益的温度依赖性
8. InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy. [R] . Sung, W. J., Kopf, R. F., Werder, D. J., 2002

机译：通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。

Collector Ideality Factor and Emitter-Base Tunneling Energy at InP/InGaAs Heteroj unction Bipolar Transistors

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