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Process window overlap for posts and lines and spaces: optimization by resist type optical settings and mask bias

机译：柱子，线条和空间的工艺窗口重叠：通过抗蚀剂类型的光学设置和掩模偏置进行优化

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摘要

Abstract: Lines and spaces with posts are a typical combination of feature types for metal layer applications. A common process window for these is difficult to achieve, especially for equally sized features on the wafer. Foremost in attaining one is minimizing the differences in the dose to size of the feature. Many methods have been studied to maximize overlapping process windows of different features. Direct feature biasing, assist features and running NA and sigma are all methods that can be applied to maximize overlap. In this work, two different feature types, isolated and dense lines and posts, are examined. It is shown, through simulation and experimentation, how the overlapping process window (OLPW) of these features can be optimized. PROLITH software will be used to simulate OLPW with the latest resist models. This is examined experimentally, using an ASM 5500/300 DUV stepper with variable NA and partial coherence, for 250nm dense and isolated lines and 250 nm posts at optimal illumination settings which are determined by PROLITH. The improvements in OLPW due to resist type, e.g.; positive tine UV6 and negative tone UVN30, combined with optimal illumination coherence and mask bias, are shown. Mask feature bias is examined for the amounts that produce a common process at each of three partial coherence settings. Also given are the trends for isolated to dense and line to post proximity bias and the comparison of these to simulation. !7
机译：摘要：带柱的线和空间是金属层应用中要素类型的典型组合。很难实现这些通用的处理窗口，特别是对于晶圆上大小相等的特征。要达到这一目的，最重要的是使剂量与特征尺寸之间的差异最小化。已经研究了许多方法来最大化不同特征的重叠过程窗口。直接特征偏置，辅助特征以及运行的NA和sigma都是可用于最大化重叠的方法。在这项工作中，检查了两种不同的要素类型，即隔离的和密集的线和柱。通过仿真和实验显示了如何优化这些功能的重叠过程窗口（OLPW）。 PROLITH软件将用于使用最新的抗蚀剂模型来模拟OLPW。使用具有可变NA和部分相干性的ASM 5500/300 DUV步进器，以PROLITH所确定的最佳照明设置，对250nm密集和隔离的线和250nm柱进行实验检查。由于抗蚀剂类型，例如，OLPW的改进；显示了正齿UV6和负色调UVN30，以及最佳的照明相干性和蒙版偏置。在三个部分相干设置的每一个处，都会检查遮罩特征偏差的产生量，该量会产生共同的过程。还给出了隔离到密集和线到后接近偏差的趋势，以及与仿真的比较。 ！7

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