Theoretic study of the structures and electric properties of N-doped InSb nanoclusters

著录项

• 来源
  《International Conference of Chinese Society of Micro-Nano Technology;Annual Conference of the Chinese Society of Micro-Nano Technology》|2010年|p.574-578|共5页
• 会议地点 Xian(CN);Xian(CN)
• 作者

  Jian-Ning Ding; Ning-Yi Yuan; Xiu-Qin Wang; Chang-Lin Li; Gu-Qiao Ding;

  展开▼
• 作者单位

  Center for low-dimensional materials, micro-nano devices and system, Changzhou University, 1 Ge Hu Road, Changzhou 213164, Jiangsu, China;

  Center for low-dimensional materials, micro-nano devices and system, Changzhou University, 1 Ge Hu Road, Changzhou 213164, Jiangsu, China;

  Center for low-dimensional materials, micro-nano devices and system, Changzhou University, 1 Ge Hu Road, Changzhou 213164, Jiangsu, China;

  Center for low-dimensional materials, micro-nano devices and system, Changzhou University, 1 Ge Hu Road, Changzhou 213164, Jiangsu, China;

  Center for low-dimensional materials, micro-nano devices and system, Changzhou University, 1 Ge Hu Road, Changzhou 213164, Jiangsu, China;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 光学仪器;微电子学、集成电路（IC）;
• 关键词

  nanoclusters; InSb; N-doping; structures; electric properties;

  机译：纳米团簇; InSb; N掺杂；结构；电性能;