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Lateral RF MEMS Switch Based on Surface Micromachining Process

机译:基于表面微加工工艺的横向RF MEMS开关

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摘要

In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.
机译:在本文中,提出了一种新型的由梳子驱动的RF MEMS开关,具有低插入损耗。通过表面微加工工艺制造了具有横向电阻触点和在硅基板上具有金结构层的SPST RF MEMS开关。开关的RF性能表明,在20 GHz时插入损耗低于0.30 dB,回波损耗优于20 dB,隔离度大于30 dB。大的接触面积和横向的Au-Au电阻接触实现了良好的RF特性。

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