Institute of Microelectronics, Tsinghua University, Beijing, CHINA;
Institute of Microelectronics, Tsinghua University, Beijing, CHINA;
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA;
Institute of Microelectronics, Tsinghua University, Beijing, CHINA;
Institute of Microelectronics, Tsinghua University, Beijing, CHINA;
ME composites; magnetic sensor; PZT; tefernol-D;
机译:交替磁场条件下基于Terfenol-D和PZT的磁电复合材料的研究
机译:磁场取向对Ni / PZT / Terfenol-D复合材料中磁电耦合双峰现象的影响
机译:Terfenol-D / PZT / Terfenol-D三层复合材料的单直流磁场可调谐机电共振
机译:基于Terfenol-D / PZT / Terfenol-D磁电复合材料的微磁场传感器
机译:具有先进信号处理能力的基于Terfenol-D的磁致伸缩外腔二极管激光传感器的设计,制造和分析。
机译:考虑新的界面耦合因子的盘形Terfenol-D / PZT层状复合材料的低频磁电效应等效电路模型
机译:磁场取向对Ni / PZT / Terfenol-D复合材料中磁电耦合双峰现象的影响
机译:基于电子隧道位移传感器的微机械磁场传感器;杂志文章