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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Small Feature Accuracy Challenge for CD-SEM Metrology Physical Model Solution
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Small Feature Accuracy Challenge for CD-SEM Metrology Physical Model Solution

机译：CD-SEM计量物理模型解决方案的小特征精度挑战

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摘要

Downscaling of semiconductor fabrication technology requires continuous improvements in production process control. To ensure tool-to-tool matching and compatibility of critical dimension-scanning electron microscopy (CD-SEM) measurements to measurements from other technologies, such as optical CD, or from other fabrication entities, accuracy has become a much more important factor than in the past. CD-SEM measurements have always yielded a bias, which can be quite significant, but also typically neglected since it does not vary much over a process window. However, the standard CD-SEM metrology approach to algorithm accuracy (which can be formulated "Accuracy= Precision + Calibration") does not work for small features; i.e., the measurement bias is not constant for small features. Limitations of the standard measurement algorithm, based on the treatment of the singular point of the waveform for CDs smaller than 30 nm and the new model library-based approach, were considered. The implementation of reliable measurement algorithms for features at the 45 nm node and beyond requires development of more sophisticated approaches to SEM signal treatment. A three-dimensional (3-D) physical model that takes into account physical processes related to the beam interaction with material is considered. Reliability of the new approach is verified using Monte-Carlo SEM simulation and real SEM images as compared to reference measurements; total measurement uncertainty (TMU) is improved with the better models. The relation of the developed method to the standard SEM measurement algorithm and model-based approach is also considered.
机译：半导体制造技术的缩小规模要求生产过程控制的不断改进。为了确保工具与工具的匹配以及关键尺寸扫描电子显微镜（CD-SEM）测量与其他技术（例如光学CD）或其他制造实体的测量的兼容性，精度已成为重要的因素。过去。 CD-SEM测量始终会产生偏差，该偏差可能非常显着，但由于在整个过程窗口内变化不大，通常也被忽略。但是，用于算法精度的标准CD-SEM度量方法（可以表述为“精度=精度+校准”）不适用于小功能；即，对于小的特征，测量偏差不是恒定的。考虑了基于测量小于30 nm的CD的波形奇异点和基于模型库的新方法的标准测量算法的局限性。对于45 nm节点及以后的特征，要实现可靠的测量算法，就需要开发更复杂的SEM信号处理方法。考虑了一个三维（3-D）物理模型，该模型考虑了与束与材料交互作用有关的物理过程。与参考测量相比，使用蒙特卡洛SEM模拟和真实SEM图像验证了新方法的可靠性；更好的模型可以改善总测量不确定度（TMU）。还考虑了开发方法与标准SEM测量算法和基于模型的方法之间的关系。

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