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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Polarization Control for Enhanced Defect Detection on Advanced Memory Devices
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Polarization Control for Enhanced Defect Detection on Advanced Memory Devices

机译：极化控制可增强高级存储设备上的缺陷检测能力

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摘要

Dense repetitive wafer structures, such as memory cells, with a pitch below the wavelength of the illumination light may take on effective birefringent properties, especially in layers of high refractive index materials such as silicon or conductors. Such induced "form birefringence" effects may result in dependency of the optical response on the illumination polarization and direction. In such structures, control over the polarization of the light becomes important to enhance signal-to-noise ratio (SNR) of pattern defects. We present defect detection results and analysis using DUV laser illumination for different polarization configurations and collection perspectives on Flash RAM devices. Improvement in detection SNR of bridge defect type is observed with linear illumination polarization perpendicular to the pattern lines. Generally, for small design rules (smaller than wavelength) polarization effects become more evident. Also, for smaller defect sizes, detection strongly depends on control of the illumination polarization. Linear polarization perpendicular to the pattern showed penetration into the structure even though the pitch is smaller than the illumination wavelength.
机译：间距低于照明光的波长的致密的重复晶片结构（例如存储单元）可能具有有效的双折射特性，尤其是在高折射率材料（例如硅或导体）层中。这种诱发的“形式双折射”效应可能导致光学响应依赖于照明偏振和方向。在这样的结构中，控制光的偏振对于提高图案缺陷的信噪比（SNR）变得重要。我们提供缺陷检测结果和使用DUV激光照明进行分析的结果，以了解不同的偏振配置和Flash RAM设备上的收集角度。通过垂直于图案线的线性照明偏振观察到了桥缺陷类型的检测SNR的改善。通常，对于较小的设计规则（小于波长），偏振效应会变得更加明显。同样，对于较小的缺陷尺寸，检测很大程度上取决于照明偏振的控制。即使间距小于照明波长，垂直于图案的线性偏振也显示穿透结构。

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