• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Integrated scatterometry in high volume manufacturing for polysilicon gate etch control
【24h】

Integrated scatterometry in high volume manufacturing for polysilicon gate etch control

机译：大批量生产中的集成散射测量，用于多晶硅栅极蚀刻控制

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For several years, integrated scatterometry has held the promise of wafer-level process control. While integrated scatterometry on lithography systems is being used in manufacturing, production implementation on etch systems is just beginning to occur. Because gate patterning is so important to yield, gate linewidth control is viewed by many as the most critical application for integrated scatterometry on etch systems. IBM has implemented integrated scatterometry on its polysilicon gate etch systems to control gate linewidth for its 90 nm node SOI-based microprocessors in its 300 mm manufacturing facility. This paper shows the performance of the scatterometry system and the equipment-based APC system used to control the etch process. Some of the APC methodology is described, as well as sampling strategies, throughput considerations, and scatterometry models. Results reveal that the scatterometry measurements correlate well to CD-SEM measurements before and after etch, and also correlate to electrical measurements. Finally, the improvement in linewidth distribution following the implementation of feedforward and feedback control in full manufacturing is shown.
机译：几年来，集成散射测量法一直致力于晶圆级工艺控制。在制造中使用光刻系统上的集成散射测量技术时，在蚀刻系统上的生产实现才刚刚开始。由于栅极构图对成品率至关重要，因此许多人认为栅极线宽控制是蚀刻系统上集成散射测量的最关键应用。 IBM已在其多晶硅栅极蚀刻系统上实施了集成散射测量，以控制其300毫米制造工厂中基于90 nm节点SOI的微处理器的栅极线宽。本文展示了散射测量系统和用于控制蚀刻过程的基于设备的APC系统的性能。描述了一些APC方法，以及采样策略，通量注意事项和散射测量模型。结果表明，散射测量与蚀刻前后的CD-SEM测量具有良好的相关性，也与电测量具有相关性。最后，显示了在整个制造过程中实施前馈和反馈控制后线宽分布的改善。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号