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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Back End of Line Metrology Control Applications Using Scatterometry
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Back End of Line Metrology Control Applications Using Scatterometry

机译：使用散射法的线计量控制后端

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Scatterometry is a novel metrology approach for process control that has recently been gaining more momentum in microlithography applications. The method can simultaneously measure Critical Dimension (CD), Side Wall Angle (SWA), and thickness of more than one layer. It analyzes the scattered and diffracted light from a periodic array of lines or holes that represent the surface structure of the measured sample. Scatterometry provides a non-destructive technique offering high precision and stability along with high tool-uptime performance. As such, it offers an excellent approach for real-time high volume production control with significant advantages as compared to traditional technologies such as CD-SEM and Profilometry. As the structure dimension shrinks considerably, producing high precision results becomes more critical. To date, reports on the deployment of Scatterometry in real production environment have focused on Front End of Line (FEOL) applications such as STI and Gate. However, Back End of Line (BEOL) process control has not been widely reported. In this work, we will discuss the results of our study specifically for metal trench and contact layer on both patterned and etched wafers for 65nm technology node. We will also report the comparison between Scatterometry results to Critical Dimension Scanning Electron Microscope (CD-SEM) and Atomic Force Microscope (AFM). Finally we will provide a statistical analysis of our Scatterometry results including precision, fleet precision, and TMU analysis. In contrast to the relatively simple stacks that comprise a FEOL structure, BEOL layers are typically complex structures with a large number of underlying layers. Generation of simulated Scatterometry signatures that constitute a reference library for complex structures can require long computational times and result in large file sizes. To mitigate the computational overhead, it is necessary to intelligently decide which parameters to fix and which to vary. An additional complication is presented due to similarities in the optical properties of BEOL stack materials, which can introduce potential for parameter cross-correlation in the measurement. We will discuss methodologies for optimally selecting parameters to be fixed or varied to minimize these effects.
机译：散射法是一种用于过程控制的新颖计量方法，最近在微光刻应用中获得了更大的发展势头。该方法可以同时测量临界尺寸（CD），侧壁角度（SWA）和一层以上的厚度。它分析了代表被测样品表面结构的周期性线或孔阵列的散射和衍射光。散射测量提供了一种非破坏性技术，可提供高精度和稳定性以及较高的工具正常运行时间性能。因此，与CD-SEM和轮廓分析等传统技术相比，它提供了一种出色的实时大批量生产控制方法，具有显着优势。随着结构尺寸的大幅缩小，产生高精度结果变得更加关键。迄今为止，有关散射测量在实际生产环境中的部署的报告都集中在诸如STI和Gate之类的前端（FEOL）应用程序上。但是，尚未广泛报道后端（BEOL）过程控制。在这项工作中，我们将讨论我们针对65nm技术节点的图案化和蚀刻晶圆上的金属沟槽和接触层的研究结果。我们还将报告散射测量结果与临界尺寸扫描电子显微镜（CD-SEM）和原子力显微镜（AFM）之间的比较。最后，我们将对散射测量结果进行统计分析，包括精度，车队精度和TMU分析。与包括FEOL结构的相对简单的堆栈相反，BEOL层通常是具有大量下层的复杂结构。生成构成复杂结构参考库的模拟散射法签名可能需要较长的计算时间，并导致文件大。为了减轻计算开销，有必要智能地确定要修复的参数和要更改的参数。由于BEOL叠层材料的光学特性相似，因此出现了其他复杂情况，这可能会导致测量中参数互相关的可能性。我们将讨论最佳选择固定或可变参数以最小化这些影响的方法。

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