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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Accurate In-line CD Metrology for Nanometer Semiconductor Manufacturing
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Accurate In-line CD Metrology for Nanometer Semiconductor Manufacturing

机译：用于纳米半导体制造的精确在线CD计量

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The need for absolute accuracy is increasing as semiconductor-manufacturing technologies advance to sub-65nm nodes, since device sizes are reducing to sub-50nm but offsets ranging from 5nm to 20nm are often encountered. While TEM is well-recognized as the most accurate CD metrology, direct comparison between the TEM data and in-line CD data might be misleading sometimes due to different statistical sampling and interferences from sidewall roughness. In this work we explore the capability of CD-AFM as an accurate in-line CD reference metrology. Being a member of scanning profiling metrology, CD-AFM has the advantages of avoiding e-beam damage and minimum sample damage induced CD changes, in addition to the capability of more statistical sampling than typical cross section metrologies. While AFM has already gained its reputation on the accuracy of depth measurement, not much data was reported on the accuracy of CD-AFM for CD measurement. Our main focus here is to prove the accuracy of CD-AFM and show its measuring capability for semiconductor related materials and patterns. In addition to the typical precision check, we spent an intensive effort on examining the bias performance of this CD metrology, which is defined as the difference between CD-AFM data and the best-known CD value of the prepared samples. We first examine line edge roughness (LER) behavior for line patterns of various materials, including polysilicon, photoresist, and a porous low k material. Based on the LER characteristics of each patterning, a method is proposed to reduce its influence on CD measurement. Application of our method to a VLSI nanoCD standard is then performed, and agreement of less than 1 nm bias is achieved between the CD-AFM data and the standard's value. With very careful sample preparations and TEM tool calibration, we also obtained excellent correlation between CD-AFM and TEM for poly-CDs ranging from 70nm to 400nm. CD measurements of poly ADI and low k trenches are also reported, and both show good correlation to in-line CD-SEM results.
机译：随着半导体制造技术发展到65nm以下的节点，对绝对精度的需求正在增加，因为器件尺寸已缩小至50nm以下，但经常会遇到5nm至20nm的偏移。尽管TEM被公认为最准确的CD度量标准，但有时由于不同的统计采样和侧壁粗糙度的干扰，TEM数据和在线CD数据之间的直接比较可能会产生误导。在这项工作中，我们探索了CD-AFM作为准确的在线CD参考计量的功能。作为扫描轮廓测量的成员，CD-AFM具有避免电子束损坏和最小的样品损坏引起的CD变化的优点，此外还具有比典型横截面计量学更多的统计采样功能。尽管AFM已经在深度测量的准确性上赢得了声誉，但有关CD-AFM用于CD测量的准确性的报道却很少。我们在这里的主要重点是证明CD-AFM的准确性，并展示其对半导体相关材料和图案的测量能力。除了典型的精度检查外，我们还花费了大量精力来检查这种CD度量的偏差性能，该偏差的定义是CD-AFM数据与所准备样品的最著名CD值之间的差。我们首先检查各种材料的线条图案的线条边缘粗糙度（LER）行为，包括多晶硅，光刻胶和多孔低k材料。基于每个图案的LER特性，提出了一种减少其对CD测量的影响的方法。然后将我们的方法应用于VLSI nanoCD标准，并且CD-AFM数据和标准值之间的偏差小于1 nm。通过非常仔细的样品制备和TEM工具校准，对于70nm至400nm范围内的多CD，我们还获得了CD-AFM与TEM之间的出色关联。还报道了聚ADI和低k沟槽的CD测量，两者均与在线CD-SEM结果显示出良好的相关性。

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