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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XXI pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6518 pt.2 >Application of integrated scatterometry (iODP) to detect and quantify resist profile changes due to resist batch changes in a production environment
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Application of integrated scatterometry (iODP) to detect and quantify resist profile changes due to resist batch changes in a production environment

机译：集成散射测量（iODP）在检测和量化由于生产环境中抗蚀剂批次变化而引起的抗蚀剂轮廓变化中的应用

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摘要

Scatterometry is currently being used in lithography production as an inline metrology tool to monitor wafer processing and detect excursions. One well-documented excursion is the process variation caused by differences in resist batches. This paper describes the use of Tokyo Electron Limited's integrated Optical Digital Profilometry (iODP~TM) scatterometry system to detect process variations caused by resist batch changes. This system was able to detect a significant shift in resist sidewall angle (SWA) on an incoming resist batch that was undetected by the primary metrology in use at the time, a scanning electron microscope (CD-SEM). This SWA shift correlated to an undesirable shift in post-etch CD created by the new resist batch. Experiments performed in conjunction with the resist supplier confirmed that the normal batch-to-batch variation of a key resist component was enough to produce a change in SWA after processing. This validation led to quality improvement controls by the resist vendor and Qimonda and resulted in the use of iODP as the primary metrology for this process.
机译：散射测量法目前正在光刻生产中用作在线计量工具，以监视晶圆加工和检测偏移。一个有据可查的偏移是由抗蚀剂批次不同引起的工艺变化。本文介绍了使用东京电子有限公司的集成光学数字轮廓测量（iODPTM）散射测量系统来检测由抗蚀剂批次变化引起的工艺变化。该系统能够检测到传入的抗蚀剂批次上的抗蚀剂侧壁角（SWA）的显着变化，这在当时使用的主要计量学方法（扫描电子显微镜（CD-SEM））中是无法发现的。该SWA偏移与由新抗蚀剂批次产生的蚀刻后CD中的不希望的偏移相关。与抗蚀剂供应商一起进行的实验证实，关键抗蚀剂组分的正常批次间差异足以在加工后产生SWA的变化。该验证导致抗蚀剂供应商和奇梦达进行了质量改进控制，并导致将iODP用作该过程的主要计量方法。

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