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首页> 外文会议>Micro Electro Mechanical Systems (MEMS), 2009 IEEE 22nd International Conference on; Sorrento,Italy >Novel Micro Capacitive Inclinometer with Oblique Comb Electrode and Suspension Spring Aligned Parallel to {111} Vertical Planes of (110) Silicon
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Novel Micro Capacitive Inclinometer with Oblique Comb Electrode and Suspension Spring Aligned Parallel to {111} Vertical Planes of (110) Silicon

机译：具有倾斜梳状电极和悬架弹簧的平行于（110）硅{111}垂直平面的新型微电容测斜仪

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摘要

A novel high resolution micro capacitive inclinometer has been developed using (110) silicon. KOH crystalline wet etching was employed after silicon deep reactive ion etching (DRIE) to reduce morphologic defects on the sidewalls of oblique comb electrodes aligned parallel to vertical {111} plane. Suspension springs are also parallel to other vertical {111} plane to secure the width during KOH wet etching. The sensitivity (pF/?°) was increased because the oblique comb electrodes change both the overlapped area and gap during operation. The capacitance changed from -0.8 to 0.8 pF for -90?° -90?° and resolution was estimated at 0.18?° or less for ?±80?°.
机译：已经开发出一种使用（110）硅的新型高分辨率微电容测斜仪。在硅深反应离子刻蚀（DRIE）之后采用KOH晶体湿法刻蚀，以减少平行于垂直{111}平面排列的倾斜梳状电极侧壁上的形貌缺陷。悬架弹簧还平行于其他垂直{111}平面，以在KOH湿法蚀刻期间确保宽度。灵敏度（pF /Δ°）增加是因为倾斜的梳状电极在操作期间改变了重叠面积和间隙。对于-90°-90°，电容从-0.8变为0.8 pF，对于±±80°°，分辨率估计为0.18°或更低。

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