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首页> 外文会议>Microelectromechanical structures for materials research >FINITE ELEMENT SIMULATIONS OF THE MECHANICAL STRESS IN AND AROUND NARROW TISI_2 LINES
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FINITE ELEMENT SIMULATIONS OF THE MECHANICAL STRESS IN AND AROUND NARROW TISI_2 LINES

机译：窄TISI_2线及其周围的机械应力的有限元模拟。

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The primary objective of this work is to carry out a combined experimental and numerical investigation of the mechanical stress induced during the Ti-silicidation of narrow lines spaced by a Poly Buffered Local field oxide. Therefore micro-Raman spectroscopy (μRS) measurements of local mechanical stress are combined with simulations by Finite Element Modeling (FEM). Numerical determination of the local stress in the Si-substrate by means of FEM becomes more and more important when scaling down the device dimensions because the spatial resolution of μRS is limited at about 1μm and because the stress in the Si-substrate underneath silicided lines can not be detected using μRS unless the silicide is very thin. The Finite Element analysis was done using SYSTUS and involves a two dimensional plane strain thermo-elastic formulation. A good agreement was obtained between the FEM simulations and the μRS data for line widths above 1μm making the extrapolation of the FEM to line widths smaller than 1μm an attractive alternative for μRS.
机译：这项工作的主要目的是对由多缓冲局部场氧化物隔开的细线的Ti硅化过程中产生的机械应力进行实验和数值研究的组合。因此，局部机械应力的微拉曼光谱（μRS）测量与有限元建模（FEM）的模拟相结合。当缩小器件尺寸时，通过FEM进行Si衬底中局部应力的数值确定变得越来越重要，因为μRS的空间分辨率限制在大约1μm，并且硅化线下方的Si衬底中的应力可以除非硅化物非常薄，否则无法使用μRS进行检测。有限元分析是使用SYSTUS进行的，涉及二维平面应变热弹性公式。对于线宽大于1μm的FEM仿真与μRS数据之间取得了很好的一致性，这使得将FEM外推到小于1μm的线宽成为μRS的有吸引力的替代方案。

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