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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >CHARACTERISTICS OF TITANIUM OXIDE GATE NMOSFET FORMED BY E- BEAM EVAPORATION WITH ADDITIONAL RAPID THERMAL OXIDATION AND ANNEALING
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CHARACTERISTICS OF TITANIUM OXIDE GATE NMOSFET FORMED BY E- BEAM EVAPORATION WITH ADDITIONAL RAPID THERMAL OXIDATION AND ANNEALING

机译：电子束蒸发加快速热氧化和退火形成的二氧化钛栅NMOSFET的特性

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摘要

High k insulators, such as titanium oxide (TiO_x), have been obtained by Ti e-beam evaporation, using different thicknesses of 5nm, 10nm and 20nm with additional rapid thermal oxidation and annealing at temperature of 960℃ for 40s. Characterization by Fourier transform infrared (FTIR) analyses reveals the Ti-O and Si-O bonds, which confirms titanium oxide formation. Raman spectroscopy identified that these films present rutile and anatase phases. These films have been used as gate insulators in nMOSFETs. These devices and MOS capacitors, with Al electrodes and final sintering at 450℃ for 10min in forming gas, were fabricated. MOS capacitors were used to obtain capacitance-voltage (C-V) measurements, and to extract the Equivalent Oxide Thickness (EOT) from the films, resulting in values between 16.3nm and 19.7nm, and effective charge densities of about 10~(11)cm~(-2). nMOSFET electrical characteristics, such as threshold voltages between 0.39V and 0.43V and sub-threshold slopes between 61mV/dec rnand 100mV/dec, were obtained. These results indicated that the obtained TiO_x films are suitable gate insulators for MOS devices.
机译：通过Ti电子束蒸发获得了高k绝缘体，例如氧化钛（TiO_x），使用了5nm，10nm和20nm的不同厚度，并进行了快速热氧化并在960℃的温度下退火40s。通过傅立叶变换红外（FTIR）分析进行的表征揭示了Ti-O和Si-O键，这证实了氧化钛的形成。拉曼光谱法鉴定出这些膜呈现金红石相和锐钛矿相。这些薄膜已被用作nMOSFET中的栅极绝缘体。这些器件和MOS电容器带有Al电极，并在450℃下在形成气体中最终烧结10分钟。 MOS电容器用于获得电容-电压（CV）测量，并从薄膜中提取等效氧化物厚度（EOT），其值在16.3nm至19.7nm之间，有效电荷密度约为10〜（11）cm 〜（-2）。获得了nMOSFET的电学特性，例如阈值电压在0.39V至0.43V之间，亚阈值斜率在61mV / dec至100mV / dec之间。这些结果表明，所获得的TiO_x膜是适合于MOS器件的栅极绝缘体。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    AD. de Barros; J. Miyoshi; R. Wada; FA. Cavarsan; I. Doi; J.A. Diniz;

  • 作者单位

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

    UNICAMP, CCS and FEEC, CEP. 13083-970, CP. 6061, Campinas, SP, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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