The influence of structure on hot-carrier-effect immunity fordeep-sub-micron n-channel metal-oxide-semiconductor field-effect transistors(NMOSFETs)is studied using two-dimensional device simulator Medici and compared to that of counterpart conventional planar devices.The simulated structure parameters include negative junction depth,concave corner and channel effective length.Simulation results prove that grooved-gate device can deeply suppress hot carrier effect even in deep-sub micron region.The simulations also indicate that hot-carrier effect is strongly influenced by concave corner and channel length for grooved gate MOSFET.In the end,the results obtained in this work are explained from the point of interior physical mechanism of device.%基于流体动力学能量输运模型和幸运热载流子模型，用二维器件仿真软件Medici对深亚微米槽栅NMOSFET的结构参数，如沟道长度、槽栅凹槽拐角角度、漏源结深等，对器件抗热载流子特性的影响进行了模拟分析，并与常规平面器件的相应特性进行了比较.结果表明即使在深亚微米范围，槽栅器件也能很好地抑制热载流子效应，且其抗热载流子特性受凹槽拐角和沟道长度的影响较显著，同时对所得结果从内部物理机制上进行了分析解释.
展开▼
