Electroless Deposited Nickel Hard Mask for High Density Plasma Etching Applications

机译：用于高密度等离子蚀刻应用的化学沉积镍硬掩模

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Ni electroless films were used as a material for hard mask during high-density ICP plasma etching. The results have shown that under the plasma exposure strong hardening of the mask occurs and the rate of Ni film removal falls at least an order of magnitude as compared with its initial value. Therefore, very high selectivities for Si etching over Ni are obtained, allowing for very deep etching required for some MEMS applications.

机译：Ni化学镀膜用作高密度ICP等离子体蚀刻期间的硬掩模材料。结果表明，在等离子体暴露下，掩模发生了强烈的硬化，并且镍膜的去除速率与其初始值相比至少下降了一个数量级。因此，获得了在Ni上进行Si刻蚀的很高的选择性，从而允许某些MEMS应用需要非常深的刻蚀。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|403-411|共9页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
A.M. Nunes; S. A. Moshkalev; A. Flacker; P. J. Tatsch; E. Besseler;
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作者单位

School of Electrical and Computer Engineering (FEEC-UNICAMP), UNICAMP, Campinas, SP, Brazil Center for Semiconductor Components (CCS-UNICAMP) UNICAMP, CP 6061, CEP 13 083-970, Campinas, SP, Brazil;

Center for Semiconductor Components (CCS-UNICAMP) UNICAMP, CP 6061, CEP 13 083-970, Campinas, SP, Brazil;

Center for Semiconductor Components (CCS-UNICAMP) UNICAMP, CP 6061, CEP 13 083-970, Campinas, SP, Brazil;

School of Electrical and Computer Engineering (FEEC-UNICAMP), UNICAMP, Campinas, SP, Brazil Center for Semiconductor Components (CCS-UNICAMP) UNICAMP, CP 6061, CEP 13 083-970, Campinas, SP, Brazil;

School of Electrical and Computer Engineering (FEEC-UNICAMP), UNICAMP, Campinas, SP, Brazil Center for Semiconductor Components (CCS-UNICAMP) UNICAMP, CP 6061, CEP 13 083-970, Campinas, SP, Brazil;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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机译：使用电镀铜掩膜，微接触印刷和湿法蚀刻对化学沉积在玻璃上的NiB进行构图
3. Etching characteristics of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching [J] . Matsui N., Mashimo K., Egami A., Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2002,第3a4期

机译：使用CO / NH3气体等离子体对磁性材料（Co，Fe，Ni）进行刻蚀的特性，以进行掩模刻蚀
4. Electroless Deposited Nickel Hard Mask for High Density Plasma Etching Applications [C] . A. M. Nunes, S. A. Moshkalev, A. Flacker, Symposium on Microelectronics Technology and Devices . 2008

机译：用于高密度等离子体蚀刻应用的化学镀镍硬掩模
5. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation. [D] . Singh, Rajwinder. 2003

机译：III型氮化物的高密度等离子体蚀刻：工艺开发，设备应用和损坏修复。
6. Triple-phase boundary and power density enhancement in thin solid oxide fuel cells by controlled etching of the nickel anode [O] . Rabi Ebrahim, Mukhtar Yeleuov, Ainur Issova, 2014

机译：通过对镍阳极的可控刻蚀可在薄固体氧化物燃料电池中提高三相边界和功率密度
7. Electroless Deposited Nickel Hard Mask for High Density Plasma Etching Applications [O] . A. M. Nunes, S. A. Moshkalev, A. Flacker, 2016

机译：用于高密度等离子体蚀刻应用的化学沉积镍硬掩模
8. High-Density Plasma Etching of Group-III Nitride Films for Device Application [R] . Baca, A. G. , Crawford, M. H. , Han, J. , 1999

机译：用于器件应用的III族氮化物薄膜的高密度等离子体蚀刻

Electroless Deposited Nickel Hard Mask for High Density Plasma Etching Applications

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