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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Electrical characterization of Cu/Cu_2O electrodeposited contacts
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Electrical characterization of Cu/Cu_2O electrodeposited contacts

机译：Cu / Cu_2O电沉积触点的电特性

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摘要

The objective of this work was to investigate the electrical properties of electrodeposited Cu/Cu_2O interfaces in dark conditions. Cuprous oxide is a p-type semiconductor with application in various devices as metal base transistors, and it is very important to obtain good ohmic contacts to this electronic material. The Cu/Cu_2O structures were prepared from a single bath on Si substrates by electing a specific potential for each electrodeposited layer. The electrical characterization allowed the formation of reproducible interfaces with contact resistances of 2.1 MΩ/cm~2 and the determination of the resistivity of the semiconductor oxide at values of 2 × 10~(10) Ω.cm.
机译：这项工作的目的是研究在黑暗条件下电沉积的Cu / Cu_2O界面的电性能。氧化亚铜是一种p型半导体，已在各种器件中用作金属基晶体管，并且与该电子材料获得良好的欧姆接触非常重要。通过为每个电沉积层选择特定电势，从Si基板上的一次镀液中制备Cu / Cu_2O结构。电学特征允许形成具有2.1MΩ/ cm〜2的接触电阻的可再现界面，并确定2×10〜（10）Ω.cm的半导体氧化物的电阻率。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    I. S. Brandt; C. I. L. de Araujo; V. Stenger; R. G. Delatorre; A. A. Pasa;

  • 作者单位

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis 88.040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis 88.040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis 88.040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis 88.040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis 88.040-900, Brazil;

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  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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