Post-Silicidation Annealing Effects on Electrical and Structural Properties of NiPt Germanosilicide

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• 来源
  《Microelectronics Technology and Devices-SBMicro 2008》|2008年|385-393|共9页
• 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
• 作者

  Marcos Eleoterio; Ioshiaki Doi; Robinson Figueroa; Jose Alexandre Diniz; Sebastiao G. dos Santos Filho;

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• 作者单位

  School of Electrical and Computer Engineering, University of Campinas P. Box 6101,13083-970 Campinas-SP, Brazil Center for Semiconductor Components, University of Campinas P. Box 6061,13083-870 Campinas-SP, Brazil;

  School of Electrical and Computer Engineering, University of Campinas P. Box 6101,13083-970 Campinas-SP, Brazil Center for Semiconductor Components, University of Campinas P. Box 6061,13083-870 Campinas-SP, Brazil;

  School of Electrical and Computer Engineering, University of Campinas P. Box 6101,13083-970 Campinas-SP, Brazil Center for Semiconductor Components, University of Campinas P. Box 6061,13083-870 Campinas-SP, Brazil;

  School of Electrical and Computer Engineering, University of Campinas P. Box 6101,13083-970 Campinas-SP, Brazil Center for Semiconductor Components, Universit;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 微电子学、集成电路（IC）;
• 关键词