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An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode

机译：镍锗硅化肖特基二极管的电学和结构性能研究

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摘要

Ni-germanosilicided Schottky barrier diode has been fabricated by annealing the deposited Ni film on strained-Si and characterized electrically in the temperature range of 125K―300K. The chemical phases and morphology of the germanosilicided films were studied by using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). The Schottky barrier height (φ_b), ideality factor (n) and interface state density (D_(it)) have been determined from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The current-voltage characteristics have also been simulated using SEMICAD device simulator to model the Schottky junction. An interfacial layer and a series resistance were included in the diode model to achieve a better agreement with the experimental data. It has been found that the barrier height values extracted from the I-V and C-V characteristics are different, indicating the existence of an in-homogeneous Schottky interface. Results are also compared with bulk-Si Schottky diode processed in the same run. The variation of electrical properties between the strained-and bulk-Si Schottky diodes has been attributed to the presence of out-diffused Ge at the interface.
机译：镍锗硅化肖特基势垒二极管是通过在应变硅上对沉积的镍膜进行退火而制成的，其电特性在125K-300K的温度范围内。利用扫描电子显微镜（SEM），截面透射电子显微镜（TEM）和能量色散光谱（EDS）研究了锗硅化物薄膜的化学相和形貌。肖特基势垒高度（φ_b），理想因子（n）和界面态密度（D_（it））已从电流-电压（I-V）和电容-电压（C-V）特性确定。还使用SEMICAD设备模拟器对肖特基结建模，以模拟电流-电压特性。二极管模型中包括一个界面层和一个串联电阻，以便与实验数据更好地吻合。已经发现从I-V和C-V特性提取的势垒高度值是不同的，这表明存在不均匀的肖特基界面。还将结果与同一运行中处理的体硅肖特基二极管进行比较。应变硅和体硅肖特基二极管之间的电学特性变化是由于界面处存在未扩散的锗所致。

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