Analysis of Electromigratlon in Dual-Damascene Interconnect Structures

机译：双金属互连结构中的电迁移分析

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We have analyzed the stress build-up and vacancy dynamics due to material transport caused by electromigration in dual-damascene interconnect structures. Our model incorporates all relevant driving forces for material transport with a complete integration of mechanical stress in connection with microstructural aspects. First, it is shown that the addition of redundant vias can be effective in increasing the interconnect lifetime, although the spacing between the vias can have a significant impact on such an approach. Then, we discuss the importance of grain boundaries in providing triple point intersections, where the combination of high vacancy concentration and high stress is likely to cause void nucleation.

机译：我们已经分析了由于双镶嵌互连结构中电迁移引起的材料传输而导致的应力累积和空位动力学。我们的模型将材料运输的所有相关驱动力与机械应力以及微观结构方面的完整整合结合在一起。首先，示出了增加冗余通孔可以有效地延长互连寿命，尽管通孔之间的间隔可以对这种方法产生重大影响。然后，我们讨论了晶界在提供三点相交中的重要性，其中高空位浓度和高应力的组合很可能导致空核。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|337-348|共12页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
R. L. de Orio; S. Carniello; H. Ceric; S. Selberherr;
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作者单位

Institute for Microelectronics, TU Wien, Gusshausstr. 27-29, A-1040 Vienna, Austria;

Austriamicrosystems AG, Schloss Premstaatten, A-8141 Unterpremstatten, Austria;

Institute for Microelectronics, TU Wien, Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Wien, Gusshausstr. 27-29, A-1040 Vienna, Austria;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. Electromigration characteristics in dual-damascene copper interconnects by difference of via structures [J] . Nam-Hoon Kim, Sang-Yong Kim, Woo-Sun Lee, Microelectronic Engineering . 2007,第11期

机译：双大马士革铜互连中通孔结构差异的电迁移特性
2. Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures [J] . A. V. Vairagar, S. G. Mhaisalkar, M. A. Meyer, Applied Physics Letters . 2005,第8期

机译：双镶嵌铜互连树结构中电迁移破坏机理的直接证据
3. Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures [J] . A.V. Vairagar, S.G. Mhaisalkar, M.A. Meyer, Microelectronic Engineering . 2005,第3a4期

机译：储层对双镶嵌铜互连结构中电迁移机制的影响
4. Analysis of Electromigration in Dual-Damascene Interconnect Structures [C] . R. L. de Orio, S. Carniello, H. Ceric, Symposium on Microelectronics Technology and Devices . 2008

机译：双镶嵌互连结构中电迁移的分析
5. Integral equation methodologies for the signal integrity analysis of PCB and interconnect structures in layered media from DC to multi-GHz frequencies. [D] . Morsey, Jason David. 2003

机译：积分方程方法用于从DC到Multi-GHz频率的分层介质中PCB和互连结构的信号完整性分析。
6. A compact model for early electromigration failures of copper dual-damascene interconnects [O] . R.L. de Orio, H. Ceric, S. Selberherr -1

机译：铜双镶嵌互连的早期电迁移失败的紧凑模型
7. Physically-Based Simulation of Electromigration Induced Failures in Copper Dual-Damascene Interconnect [O] . Valeriy Sukharev 2014

机译：基于物理的铜双镶嵌互连电迁移诱导故障模拟

Analysis of Electromigratlon in Dual-Damascene Interconnect Structures

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