Strained-Si MOSFETs for Low-Power Applications

机译：低功率应用的应变硅MOSFET

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CMOS device/circuit performance involving mobility-enhanced strain-engineering in the channel region is studied via process and device simulations. It is shown that strained-Si (SS) devices could be applied for low-power design by lowering supply voltage. A physics-based stress induced mobility model has been developed and implemented in Synopsys Sentaurus Device simulator. The trade-offs for power and performance in strained-Si devices and circuits are discussed.

机译：通过工艺和器件仿真研究了涉及沟道区迁移率增强应变工程的CMOS器件/电路性能。结果表明，通过降低电源电压，应变硅（SS）器件可用于低功耗设计。在Synopsys Sentaurus设备仿真器中开发并实现了基于物理的应力诱发迁移率模型。讨论了应变硅器件和电路中功率和性能的权衡。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|203-211|共9页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
T. K. Maiti; T. Das; P. S. Das; S. K. Sarkar; C. K. Maiti;
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作者单位

Electronics and ECE Department, IIT Kharagpur, Kharagpur-721302, India;

Electronics and ECE Department, IIT Kharagpur, Kharagpur-721302, India;

Electronics and ECE Department, IIT Kharagpur, Kharagpur-721302, India;

ETCE Department, Jadavpur University, Kolkata-32, India;

Electronics and ECE Department, IIT Kharagpur, Kharagpur-721302, India;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications [J] . Kumar Subindu, Kumari Amrita, Das Mukul K 中南大学学报（英文版） . 2017,第006期

机译：应变引起的应变硅/应变硅1-yGey /松弛硅1-xGex MOSFET和数字应用电路的性能变化
2. Drain Current Model For Strained-si/sii_agex/strained-si Double-gate Mosfets Including Quantum Effects [J] . S Mohammadi, A Afzali-Kusha, S Mohammadi Semiconductor science and technology . 2011,第9期

机译：包含量子效应的si / sii_agex / si双向栅MOSFET的漏极电流模型
3. Impact of Strained-Si Thickness and Ge Out-Diffusion on Gate Oxide Quality for Strained-Si Surface Channel n-MOSFETs [J] . Goutam Kumar Dalapati, Sanatan Chattopadhyay, Kelvin S. K. Kwa, IEEE Transactions on Electron Devices . 2006,第5期

机译：应变硅厚度和锗向外扩散对应变硅表面沟道n-MOSFET栅极氧化物质量的影响
4. Strained-Si MOSFETs for Low-Power Applications [C] . T. K. Maiti, T. Das, P. S. Das, Symposium on Microelectronics Technology and Devices . 2008

机译：用于低功耗应用的紧张-SI MOSFET
5. Non-planar 3D iii-v mosfets for high-speed low-power logic applications [D] . Gu, Jiangjiang 2013

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6. High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects [O] . Ming-Hao Kuo, Meng-Chun Lee, Horng-Chih Lin, -1

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7. Strained-Si Devices and Circuits for Low-Power Applications [O] . Keunwoo Kim, Rajiv V. Joshi, Ching-te Chuang 2015

机译：用于低功耗应用的应变硅器件和电路

Strained-Si MOSFETs for Low-Power Applications

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