• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Dual Sign Photocurrent in Quantum Dot Structures for Infrared Photodetection
【24h】

Dual Sign Photocurrent in Quantum Dot Structures for Infrared Photodetection

机译：量子点结构中的双符号光电流用于红外光检测

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

To generate a photocurrent signal (PC) a sequence of mechanisms is necessary. First the absorption of the incident light to photoexcite a carrier, then the transport of the carrier along the structure and finally the collection of the carrier to generate the PC trough an external circuit (1). The understanding of these mechanisms, specially the extraction of the photoexcited electrons can guide us in optimizing the detectivity of a photodetector. The ideal case would be 100% efficiency, where all the excited electrons are collected, contributing to the PC. Quantum dot based structures have been intensively studied for photodetection purpose (2-14). The responsivity of quantum dot infrared photodetectors (QDIPs) is expected to be higher when compared to quantum well structures due to the longer life time of the carriers (8). Here we investigate how the layers around the quantum dot can influence the carrier extraction and consequently the photocurrent signal.
机译：为了产生光电流信号（PC），需要一系列的机制。首先，吸收入射光以使载体光激发，然后沿结构传输载体，最后收集载体以通过外部电路（1）生成PC。对这些机制的理解，特别是对光激发电子的提取，可以指导我们优化光电探测器的探测能力。理想的情况是效率为100％，其中收集所有激发的电子，从而对PC有所贡献。基于量子点的结构已被广泛研究用于光检测目的（2-14）。由于载流子的使用寿命更长，与量子阱结构相比，量子点红外光电探测器（QDIP）的响应度有望更高。在这里，我们研究量子点周围的层如何影响载流子提取，进而影响光电流信号。

著录项

  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    D. Alvarenga; C. A. Parra-Murillo; T. Gebhard; G. Penello; R. Kawabata; et al;

  • 作者单位

    DISSE - INCT de Nanodispositivos Semicondutores, Brazil Dep. Fisica, Universidade Federal de Minas Gerais, 30123-970, Belo Horizonte E rn Photonics Institute, Technische UniversitSt-Wien, Vienna, Austria;

    DISSE - INCT de Nanodispositivos Semicondutores, Brazil Dep. Fisica, Universidade Federal de Minas Gerais, 30123-970, Belo Horizonte E;

    Photonics Institute, Technische UniversitSt-Wien, Vienna, Austria;

    DISSE - INCT de Nanodispositivos Semicondutores, Brazil Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro, Bra;

    DISSE - INCT de Nanodispositivos Semicondutores, Brazil LabSem/CETUC, Pontificia Universidade Catolica, Rio de Janeiro, Brazil;

    et al;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号