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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Tantalum Nitride as Promissing Gate Electrode for MOS Technology
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Tantalum Nitride as Promissing Gate Electrode for MOS Technology

机译：氮化钽作为MOS技术的准栅电极

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摘要

To keep the CMOS technology on the roadmap, the poly crystalline silicon as gate electrode in MOS devices have been replaced by metal-nitride materials, such as tantalum nitride (TaN) and titanium nitride (TiN), mainly, due to poly-depletion effect (1-2). These materials have wear resistance, high stability, melting point and conductivity, and are compatible to high-k gate dielectrics, such as Hf-based dielectrics (3-9). TaN deposition techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been widely investigated. Nowadays, much attention has been directed on TaN sputtering deposition for gate dielectric application (1,3,10). Thus, in this work, tantalum nitride (TaN) films have been obtained by DC sputtering deposition, using different nitrogen flow and power, in a nitrogen/argon ambient on Si substrates. The nitrogen flow and power effects on structural and electrical properties of TaN films were investigated by scan profiler (film thickness and deposition rate), atomic force microscopy (grain size) and four-probe technique (electrical resistivity).
机译：为了使CMOS技术始终处于发展路线上，主要是由于多晶硅耗尽效应，MOS器件中用作多晶硅的多晶硅已被金属氮化物材料替代，例如氮化钽（TaN）和氮化钛（TiN）。 （1-2）。这些材料具有耐磨性，高稳定性，熔点和导电性，并且与高k栅极电介质兼容，例如基于Hf的电介质（3-9）。 TaN沉积技术，例如化学气相沉积（CVD）和原子层沉积（ALD）已被广泛研究。如今，在用于栅极电介质应用的TaN溅射沉积上已经引起了很多关注（1、3、10）。因此，在这项工作中，已经通过在Si衬底上的氮/氩环境中使用不同的氮气流量和功率通过DC溅射沉积获得氮化钽（TaN）膜。通过扫描轮廓仪（膜厚度和沉积速率），原子力显微镜（粒度）和四探针技术（电阻率）研究了氮流量和功率对TaN膜结构和电性能的影响。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    L. P. B. Lima; M. A. Moreira; F. H. Cioldin; J. A. Diniz and I. Doi;

  • 作者单位

    Center for Semiconductor Components (CCS), University of Campinas, P.O. Box 6061, 13.083-870 Campinas-SP, Brazil;

    Center for Semiconductor Components (CCS), University of Campinas, P.O. Box 6061, 13.083-870 Campinas-SP, Brazil;

    Center for Semiconductor Components (CCS), University of Campinas, P.O. Box 6061, 13.083-870 Campinas-SP, Brazil;

    Center for Semiconductor Components (CCS), University of Campinas, P.O. Box 6061, 13.083-870 Campinas-SP, Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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