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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting
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Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting

机译：全局侧面拟合的串联电阻二次型指数结模型参数提取。

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摘要

The continuing downscaling of semiconductor devices is turning static power consumption in complementary MOS (CMOS) circuits into a major problem because of excessive leakage currents (1). Since leakage currents arising from the parasitic diodes present in any MOSFET are a substantial portion of total leakage, modeling such currents constitutes an important task.rnThe Compact Model Council (CMC) has recently adopted (2) the surface-potential-based PSP model as the next-generation standard MOSFET model. This MOSFET model includes the JUNCAP2 diode model (3) for the parasitic diodes. This diode model is probably one of the most accurate models for circuit simulation. It accounts for wide range of conduction mechanisms, such as, direct band to band tunneling, trap-assisted tunneling, gate tunneling, gate induced drain leakage, etc. This model, which is based on 64 parameters (4), requires several iterative fitting steps to extract its parameters from measured characteristics.
机译：由于泄漏电流过大，半导体器件的不断缩小规模使互补MOS（CMOS）电路中的静态功耗成为一个主要问题。由于任何MOSFET中存在的寄生二极管产生的泄漏电流都是总泄漏的很大一部分，因此对此类电流进行建模是一项重要任务。紧凑模型委员会（CMC）最近采用（2）基于表面电势的PSP模型下一代标准MOSFET模型。该MOSFET模型包括用于寄生二极管的JUNCAP2二极管模型（3）。该二极管模型可能是电路仿真中最准确的模型之一。它考虑了广泛的传导机制，例如直接带间隧穿，陷阱辅助隧穿，栅极隧穿，栅极感应的漏极泄漏等。该模型基于64个参数（4），需要进行多次迭代拟合步骤从测量的特征中提取其参数。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    Denise Lugo-Mufioz; Michelly de Souza; Marcelo A. Pavanello; Denis Flandre; Juan Muci; et al;

  • 作者单位

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    Department of Electrical Engineering, Centro Universitdrio da FEI, Sao Bernardo do Campo, SP, Brazil;

    Department of Electrical Engineering, Centro Universitdrio da FEI, Sao Bernardo do Campo, SP, Brazil;

    rn Electrical Engineering Department, ICTEAM Institute, Universite Catholique de Louvain, Louvain-la-Neuve, Belgium;

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    et al;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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