Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

A. Ortiz-Conde; M. Estrada; A. Cerdeira

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Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

机译：通过两个具有并联电阻的理想二极管的串联组合对真实结进行建模及其参数提取

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A technique is proposed to extract the reverse saturation current parameter and ideality factor of semiconductor junctions from the low forward voltage region of the device's characteristics, even under the presence of significant parallel resistance effects. The series combination of two ideal diodes is proposed for modeling real devices with a non- linear contact resistance, in which case, the effective ideality factor at high voltage is higher than that of low voltage. It is proved, under certain physical assumptions, that the series combination of two ideal diodes can be modeled as a single effective diode for low voltage and another effective diode for high voltage. Both techniques were tested and their accuracy verified on experimental and simulated l V characteristics.

机译：提出了一种从器件特性的低正向电压区域中提取半导体结的反向饱和电流参数和理想因子的技术，即使存在明显的并联电阻效应也是如此。提出了两个理想二极管的串联组合，以对具有非线性接触电阻的真实器件进行建模，在这种情况下，高压下的有效理想因子要高于低压下的有效理想因子。在某些物理假设下，事实证明，可以将两个理想二极管的串联组合建模为一个有效的低压二极管和另一个有效的高压二极管。对这两种技术进行了测试，并在实验和仿真的Iv特性上验证了其准确性。

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来源
《Solid-State Electronics》 |2001年第2期|p.223-228|共6页
作者
A. Ortiz-Conde; M. Estrada; A. Cerdeira;
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原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
Non-ideal diode; Approximate diode model; Diode ideality factor; Diode reverse saturation current;

机译：非理想二极管;近似二极管模型;二极管理想因子;二极管反向饱和电流;

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2. Schottky barrier height extraction from forward current-voltage characteristics of non-ideal diodes with high series resistance [J] . Khaled Ahmed, Tony Chiang Applied Physics Letters . 2013,第4期

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Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

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