Low-Frequency Noise Study of p-Channel Bulk MuGFETs

机译：p通道体MuGFET的低频噪声研究

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The low-frequency (LF) noise in p-channel bulk Multiple-Gate Field-Effect Transistors (MuGFETs) with 2.5 nm SiON gate oxide has been investigated in the ohmic regime from weak to strong inversion. It is shown that both 1/f-like noise and Generation-Recombination (GR) noise are present, giving rise to a wide device-to-device scatter in the spectral density. The 1/f noise is dominated by number fluctuations from which an effective trap density in the range 5 × 10~(17) cm~(-3)eV~(-1) has been derived. At the same time, it is demonstrated that the GR noise originates from traps in the gate oxide.

机译：在从弱到强反转的欧姆状态下，已经研究了带有2.5 nm SiON栅极氧化物的p沟道体多栅极场效应晶体管（MuGFET）中的低频（LF）噪声。结果表明，同时存在1 / f类噪声和世代重组（GR）噪声，从而导致频谱密度在设备间扩散很大。 1 / f噪声受数量波动的支配，由此得出有效陷阱密度在5×10〜（17）cm〜（-3）eV〜（-1）范围内。同时，证明了GR噪声源于栅氧化物中的陷阱。

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来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.53-60|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
E. Simoen; M. Aoulaiche; N. Collaert; C. Claeys;
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作者单位

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium,Department Electrical Engineering, K.U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

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正文语种 eng
中图分类半导体技术;
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Low-Frequency Noise Study of p-Channel Bulk MuGFETs

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