Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

机译：基于硅和InAs鳍片的自旋场效应晶体管的弹道输运特性

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigate the transport properties of ballistic spin field-effect transistors (SpinFET). We show that temperature exerts a significant influence on the device characteristics. For the InAs-based SpinFET an ambient temperature higher than T=50K leads to the absence of the ability to modulate the value of the tunneling magnetoresistance through changing the bandgap mismatch between the channel and the contacts. The length of the semiconductor channel impacts significantly the device characteristics. A shorter channel is preferred for potential operations at room temperature. For the silicon-based SpinFET the spin-orbit interaction has to be taken in the Dresselhaus form. We demonstrate that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of SpinFETs.

机译：我们研究了弹道自旋场效应晶体管（SpinFET）的传输特性。我们表明温度对器件特性有重要影响。对于基于InAs的SpinFET，高于T = 50K的环境温度导致无法通过更改通道和触点之间的带隙失配来调节隧道磁阻值。半导体通道的长度会严重影响器件特性。对于在室温下可能的操作，首选较短的通道。对于基于硅的SpinFET，自旋轨道相互作用必须采用Dresselhaus形式。我们证明，具有[100]取向的硅鳍片对自旋轨道相互作用的值显示出更强的依赖性，因此对于实际实现SpinFET而言是优选的。

著录项

来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.155-162|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
D. Osintsev; V. Sverdlov; A. Makarov; S. Selberherr;
展开▼
作者单位

Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria;

Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria;

Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria;

Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels [J] . D. Osintsev, V. Sverdlov, Z. Stanojevic, Solid-State Electronics . 2012,第期

机译：使用InAs和Si通道构建的自旋场效应晶体管的传输特性与温度的关系
2. Ballistic transport properties in spin field-effect transistors [J] . K. M. Jiang, Jun Yang, R. Zhang, Journal of Applied Physics . 2008,第5期

机译：自旋场效应晶体管的弹道输运特性
3. Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit [J] . Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, _Applied Physics Express . 2013,第3期

机译：InAs，InSb和GaSb N沟道纳米线金属氧化物半导体场效应晶体管在弹道输运极限中的性能比较
4. Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins [C] . D. Osintsev, V. Sverdlov, A. Makarov, Symposium on Microelectronics Technology and Devices . 2011

机译：硅和INAS翅片基于旋转场效应晶体管的弹道运输特性
5. Transport properties of silicon complementary-metal-oxide semiconductor quantum well field-effect transistors. [D] . Naquin, Clint Alan. 2016

机译：硅互补金属氧化物半导体量子阱场效应晶体管的传输特性。
6. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor [O] . K. Takase, Y. Ashikawa, G. Zhang, -1

机译：全方位栅InAs纳米线金属氧化物半导体场效应晶体管中的高度栅可调Rashba自旋轨道相互作用
7. Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors [O] . Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, 2013

机译：硅和基于InAs的自旋场效应晶体管中高温下的电流和电导调制

Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

摘要

著录项

相似文献

相关主题

期刊订阅