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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Structural and Electrical Characterization of Nanostructured a-SiN_x:H PECVD Films
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Structural and Electrical Characterization of Nanostructured a-SiN_x:H PECVD Films

机译：纳米a-SiN_x：H PECVD薄膜的结构和电学表征

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摘要

In order to correlate the material nano structure with the electrical properties of a-SiN_x:H films a set of Si-rich SiN_x films and M/I/S capacitors utilizing these films as dielectric layer were produced and characterized. The phase separation in the Si-rich SiN_x films was studied by Raman spectroscopy and correlated with the variations in the dielectric permittivity (ε_(ox)) and the effective charge in the dielectric layer, obtained by the C-V curves. As expected a dielectric permittivity enhancement in consequence of the silicon excess in the films was observed. The variation in the effective charge was correlated to the presence of silicon clusters in the films. The studied materials present high photoluminescence in the visible range and the next step is to investigate the electroluminescence in transparent electrode / SiN_x/ Al-Si capacitors.
机译：为了使材料纳米结构与a-SiN_x：H膜的电学特性相关联，生产并表征了一组富Si的SiN_x膜和利用这些膜作为介电层的M / I / S电容器。通过拉曼光谱研究富硅SiN_x薄膜中的相分离，并与C-V曲线获得的介电常数（ε_（ox））和介电层中有效电荷的变化相关。如所预期的，观察到由于膜中硅过量而导致的介电常数提高。有效电荷的变化与薄膜中硅簇的存在有关。所研究的材料在可见光范围内呈现高光致发光，下一步是研究透明电极/ SiN_x / Al-Si电容器中的电致发光。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    M.Ribeiro; I. Y. Abe; I.Pereyra;

  • 作者单位

    EP-USP, University of Sao Paulo. P.O. Box 61548, 5424-970, Sao Paulo, Brazil;

    EP-USP, University of Sao Paulo. P.O. Box 61548, 5424-970, Sao Paulo, Brazil;

    EP-USP, University of Sao Paulo. P.O. Box 61548, 5424-970, Sao Paulo, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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