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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Morphological and Chemical Analysis of Silicon Etched by SF_6+O_2 and CF_4+O_2 Low Pressure Constricted Plasma Jet
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Morphological and Chemical Analysis of Silicon Etched by SF_6+O_2 and CF_4+O_2 Low Pressure Constricted Plasma Jet

机译：SF_6 + O_2和CF_4 + O_2低压收缩等离子体射流刻蚀的硅的形态和化学分析

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摘要

In this work, the surface of silicon etched by sulphur hexafluoride (SF_6) and carbon tetrafluoride (CF4) plasma jet, pure or mixed with oxygen gas (O_2), was investigated by scanning electron microscope (SEM), optical perfilometry and x-ray photoelectron spectroscopy (XPS). Through these techniques it was possible to investigate the etching rate, etched surface roughness and chemistry on Si surface as a function of O_2 concentration in the SF_6+O_2 and CF4+O_2 mixture. The results indicate high etching rates of up to 1.0 μm/min obtained for rf power and operating pressure at about 150W and 3.2 mTorr, respectively. The conditions whose etched profile showed higher anisotropy were obtained with CF4. Regarding the chemical analysis of the etched Si surface it was possible to identify elements of the sample surface such as F, C, N and O, as well as, their respective bonds with the Si.
机译：在这项工作中，通过扫描电子显微镜（SEM），光学渗透法和X射线研究了六氟化硫（SF_6）和四氟化碳（CF4）等离子体射流蚀刻的纯硅或与氧气（O_2）混合的硅表面。光电子能谱（XPS）。通过这些技术，有可能研究SF_6 + O_2和CF4 + O_2混合物中Si表面的腐蚀速率，腐蚀表面粗糙度和化学性质与O_2浓度的关系。结果表明，分别在约150W和3.2 mTorr的RF功率和工作压力下可获得高达1.0μm/ min的高蚀刻速率。用CF4获得了蚀刻轮廓显示出较高各向异性的条件。关于蚀刻的硅表面的化学分析，可以确定样品表面的元素，例如F，C，N和O，以及它们与Si的键。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    S. M. Wakawaiachi; L. L. Tezani; R. S. Pessoa; H. S. Medeiros; H. S. Maciel; G. Petraconi;

  • 作者单位

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil;

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil;

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil,IPD, University of Vale do Paraiba, 12244-000, S. J. dos Campos, SP, Brazil;

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil;

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil;

    Plasmas and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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