• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Sputtered Silicon Nitride Thin Films for Non-Volatile Memory Applications
【24h】

Sputtered Silicon Nitride Thin Films for Non-Volatile Memory Applications

机译：用于非易失性存储应用的溅射氮化硅薄膜

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The present work reports the preparation, as well as the optical and electrical characterization of silicon nitride reactive RF-sputtered thin films. Argon and nitrogen mixtures have been used in different concentrations to optimize the film electrical proprieties. The thickness and the refractive index of the films were measured by spectral ellipsometry and current-voltage measurements were performed. Furthermore, the films also presented a high degree of amorphization, as indicated by qualitative measurements of its crystallinity. Complete memory structures were fabricated and a program/erase voltage shift window of 10V was measured.
机译：本工作报告了氮化硅反应性射频溅射薄膜的制备以及光学和电学特性。已经使用了不同浓度的氩气和氮气混合物来优化薄膜的电气特性。膜的厚度和折射率通过光谱椭圆法测量，并进行电流-电压测量。此外，该膜还表现出高度的非晶化程度，如对其结晶度的定性测量所表明的。制造了完整的存储器结构，并测量了10V的编程/擦除电压偏移窗口。

著录项

  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    M. C. Adam; A. V. P. Coelho; M. B. Pereira; H. Boudinov;

  • 作者单位

    Institute de Fisica, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre, RS, Brazil;

    Institute de Fisica, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre, RS, Brazil;

    Institute de Fisica, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre, RS, Brazil;

    Institute de Fisica, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre, RS, Brazil;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号