• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of nanoscience and nanotechnology >A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications
【24h】

A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications

机译：具有非易失性存储器应用的TiN-Hafnia-氮化物-真空硅（THNVAS）结构的新型多晶硅场增强纳米线薄膜晶体管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A novel poly-Si field-enhanced nanowire (FEN) TFT memory with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure fabricated simply via a sidewall spacer formation has been presented. The THNVAS devices with superior memory performance were demonstrated by introducing the hafnia as blocking oxide and the vacuum, the lowest-k in nature, as tunneling layer. According to the simulation results, the memory device with oxideitride/vacuum gate dielectric exhibited a higher local electric-field of 4.72 × 10~7 V/cm as compared to 2.55 × 10~7 V/cm for the conventional oxideitride/oxide counterpart. In addition, the electric-field of tunneling layer could be further increased to 7.06 × 10~7 V/cm while the blocking oxide was substituted for hafnia. The experimental data showed that THNVAS possessed a greater threshold voltage shift of 3.75 V in 10 ms at V_(GS) = 12 V, whereas the shift only 2.5 V for THNOS ones. These considerable improvements for THNVAS devices could be attributed to the evident field enhancement across the vacuum tunneling layer. Furthermore, owing to the empty feature of vacuum tunneling layer, the THNVAS demonstrated much-improved endurance performance and preferable data retention property. Hence, such excellent characteristics of THNVAS will be an attractive nonvolatile memory for future system-on-panel and 3-D Flash applications.
机译：提出了一种新型的多晶硅场增强纳米线（FEN）TFT存储器，该存储器具有通过侧壁间隔物结构简单制造的TiN-氮化-真空-硅（THNVAS）结构。 THNVAS器件具有出色的存储性能，它是通过引入氧化blocking作为阻挡氧化物和真空（自然界中最低的k）作为隧穿层来证明的。根据仿真结果，具有氧化物/氮化物/真空栅极电介质的存储器件具有更高的局部电场，为4.72×10〜7 V / cm，而传统的氧化物/氮化物为2.55×10〜7 V / cm /氧化物。另外，用氧化阻挡层代替氧化f可以进一步提高隧穿层的电场强度至7.06×10〜7 V / cm。实验数据表明，THNVAS在V_（GS）= 12 V时，在10 ms内具有3.75 V的更大阈值电压漂移，而THNOS的阈值电压漂移仅为2.5V。 THNVAS设备的这些显着改进可归因于整个真空隧穿层的明显场增强。此外，由于真空隧穿层的空特性，THNVAS表现出大大提高的耐久性能和较好的数据保留性能。因此，THNVAS的这种出色特性将成为未来的面板上系统和3D闪存应用的有吸引力的非易失性存储器。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号