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首页> 美国卫生研究院文献>ACS Omega >Graphene Oxide as a Dielectric and Charge Trap Elementin Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
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Graphene Oxide as a Dielectric and Charge Trap Elementin Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory

机译：氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用

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摘要

In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 108 V/m. The current transport mechanism was explained from the output characteristics using the Fowler–Nordheim tunneling theory. Capacitance–voltage (C–V) measurements have been employed to determine the value of the oxide capacitance and to examine the memory effect. The hysteresis behavior observed from the C–V characteristics show the suitability of the device for memory applications with a low operating voltage of 3 V. The charge trapping behavior of GO was explained by the energyband diagram. Frequency-dependent C–V measurements in the range 100 kHz to 1 MHz were also performedto account for the memory window obtained in the devices. The chargeretention and endurance characteristics were evaluated under a constantvoltage stress to check the reliability of device operation.
机译：在本报告中，利用氧化石墨烯（GO）的介电特性成功实现了适用于非易失性存储应用的低功率并五苯薄膜晶体管。在涂覆有铟锡氧化物的玻璃基板上制造了两种不同类型的器件，其中两种不同的金属（即金和铝）作为源极和漏极触点。从设备的场效应特性分析了它们的性能。两种器件均显示出主要的p型电荷传输行为。击穿电场确定为1.02×10 8 V / m。使用Fowler-Nordheim隧道理论从输出特性解释了当前的传输机制。电容-电压（CV）测量已用于确定氧化物电容的值并检查记忆效应。从C–V特性观察到的磁滞行为表明该器件适用于3 V低工作电压的存储器应用。GO的电荷俘获行为由能量解释带图。还进行了100 kHz至1 MHz范围内与频率有关的CV测量以说明在设备中获得的内存窗口。费用保持力和耐力特性在恒定条件下进行评估电压应力以检查设备操作的可靠性。

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