SOI n- and pMuGFET devices with different TiN metal gate thickness under influence of sidewall crystal orientation

机译：TiN金属栅厚度不同的SOI n和pMuGFET器件在侧壁晶体取向的影响下

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This work presents an analysis of SOI p- and nMuGFET devices with different TiN metal gate electrode thickness for rotated and standard structures. Thinner TiN metal gate allows achieving large gain in spite of the reduced variation observed of g_m/I_(DS) characteristics. This effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. Even with the lager mobility of the rotated nMuGFET devices when compared with the standard ones, the larger output conductance degradation resulted in an almost similar intrinsic voltage gain, p- Channel devices when implemented on the rotated layout offer a lower intrinsic voltage gain.

机译：这项工作对具有不同TiN金属栅电极厚度的SOI p和nMuGFET器件进行了旋转和标准结构分析。尽管g_m / I_（DS）特性的变化减小，但更薄的TiN金属栅极仍可实现较大的增益。这种影响可以归因于观察到的TiN金属栅极越薄，早期电压值越高。即使与标准的nMuGFET器件相比，旋转的nMuGFET器件具有更大的迁移率，较大的输出电导降级也会导致几乎相同的固有电压增益，而在旋转布局上实施的p沟道器件则具有较低的固有电压增益。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.215-222|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
M. Rodrigues; M. Galeti; J.A. Martino; N. Collaert; E. Simoen; C. Claeys;
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作者单位

University of Sao Paulo - LS1/PSI/USP Av. Prof. Luciano Gualberto, trav. 3, n 158-05508-010 Sao Paulo, Brazil;

University of Sao Paulo - LS1/PSI/USP Av. Prof. Luciano Gualberto, trav. 3, n 158-05508-010 Sao Paulo, Brazil;

University of Sao Paulo - LS1/PSI/USP Av. Prof. Luciano Gualberto, trav. 3, n 158-05508-010 Sao Paulo, Brazil;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium,E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

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正文语种 eng
中图分类半导体技术;
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1. Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation [J] . M. Rodrigues, M. Galeti, J.A. Martino, Solid-State Electronics . 2011,第1期

机译：模拟操作下侧壁晶体取向，HfSiO氮化和TiN金属栅极厚度对n-MuGFET的影响
2. Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor [J] . Jae Woo Lee, Eddy Simoen, Anabela Veloso ACS applied materials & interfaces . 2013,第18期

机译：替代金属栅体鳍片场效应晶体管的后处理的侧壁结晶取向效应
3. Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor [J] . Jae Woo Lee, Eddy Simoen, Anabela Veloso ACS applied materials & interfaces . 2013,第18期

机译：替代金属栅体鳍片场效应晶体管的后处理的侧壁结晶取向效应
4. SOI n- and pMuGFET devices with different TiN metal gate thickness under influence of sidewall crystal orientation [C] . M. Rodrigues, M. Galeti, J. A. Martino, Symposium on Microelectronics Technology and Devices . 2011

机译：侧壁晶体取向影响下具有不同锡金属栅极厚度的SOI N和PMUGFET器件
5. Systematic evaluation of metal gate electrode effective work function and its influence on device performance in CMOS devices. [D] . Wen, Huang-Chun. 2006

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6. A METHOD OF PRODUCING LONG SINGLE-CRYSTALS OF METAL AND A STUDY OF THE FACTORS INFLUENCING CRYSTAL-ORIENTATION AND PERFECTION [O] . Alexander Goetz, Maurice F. Hasler 1929

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7. Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness [O] . Pavunny, S. P., Misra, P., Thomas, R., 2013

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8. Influence of Crystal Structure, Orientation, and Solubility on Adhesion and Sliding Friction of Metal Single Crystals in Vacuum [R] . Buckley, D. H. 1968

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SOI n- and pMuGFET devices with different TiN metal gate thickness under influence of sidewall crystal orientation

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