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Electrical Characterization of TeO_2-ZnO Dielectrics Containing Au Nanoparticles

机译:含金纳米粒子的TeO_2-ZnO电介质的电学表征

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摘要

This work presents the production and characterization of thin films produced by RF Magnetron Sputtering technique for applications as high-k materials. RF co-sputtering was used for deposition of amorphous films on silicon substrates. Targets of 85.5TeO_2-14.5ZnO (in wt.%) and bulk gold with purity of 99.99% were RF sputtered. It was developed an appropriate methodology for the nucleation of thin films. The films were characterized by profilometry, transmission electron microscopy (TEM) and electrical measurements to obtain the capacitance curves and determine the dielectric constant (k). By profilometry technique, it was possible to measure the thickness of the thin film and determine the deposition rate. By TEM measurements we verified the presence of metallic nanoparticles and the type of structure formed by the array elements. The film without nanoparticles showed dielectric constant k = 6.5, which enhanced to 10 in the presence of Au nanoparticles in the vitreous matrix.
机译:这项工作介绍了通过射频磁控溅射技术生产的薄膜的生产和特性,该薄膜可用于高k材料。 RF共溅射用于在硅衬底上沉积非晶膜。 RF溅射85.5TeO_2-14.5ZnO(按重量%)和纯度为99.99%的块状金的靶。已经开发了用于成核薄膜的适当方法。通过轮廓测定,透射电子显微镜(TEM)和电学测量来表征膜,以获得电容曲线并确定介电常数(k)。通过轮廓测定技术,可以测量薄膜的厚度并确定沉积速率。通过TEM测量,我们验证了金属纳米颗粒的存在以及由阵列元素形成的结构类型。没有纳米颗粒的薄膜的介电常数k = 6.5,在玻璃体基质中存在金纳米颗粒时,介电常数增加到10。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者单位

    Laboratorio de Tecnologia era Materiais Fotonicos e Optoeletronicos, Faculdade de Tecnologia de Sao Paulo, Sao Paulo, SP 01124-060, Brasil;

    Departamento de Sistemas Integraveis, Universidade de Sao Paulo, Sao Paulo, SP 05508-900, Brasil;

    Departamento de Sistemas Integraveis, Universidade de Sao Paulo, Sao Paulo, SP 05508-900, Brasil;

    Laboratorio de Tecnologia era Materiais Fotonicos e Optoeletronicos, Faculdade de Tecnologia de Sao Paulo, Sao Paulo, SP 01124-060, Brasil;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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