Electrical characterization and dielectric impedance of Au-CdS/p-porous GaAs/p~(++)-GaAs thin film structures

Nejeh Hamdaoui; Lotfi Beji

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Electrical characterization and dielectric impedance of Au-CdS/p-porous GaAs/p~(++)-GaAs thin film structures

机译：Au / n-CdS / p多孔GaAs / p〜（++）-GaAs薄膜结构的电特性和介电阻抗

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Current-voltage, capacitance-voltage-frequency characteristics, and impedance spectroscopy (IS) under conditions of reverse and forward bias are reported in Au/CdS/porous GaAs/GaAs devices. By comparing the C-V and C-f measurements, a possible existence of two depletion layers in our structure is discussed. In contrast to the typically expected parallel association of resistive and capacitive elements, an equivalent circuit is extracted from impedance plots, which employs the constant phase element and accounts for trap states and frequency dispersion. IS makes it possible not only to clarify the contribution of additional capacitive component due to the porous GaAs/GaAs interface by using an appropriate equivalent circuit model analysis but also to estimate a more reliable capacitance value of every junction in the structure.

机译：在Au / CdS /多孔GaAs / GaAs器件中，报告了反向和正向偏置条件下的电流-电压，电容-电压-频率特性和阻抗谱（IS）。通过比较C-V和C-f测量，我们的结构中可能存在两个耗尽层。与通常预期的电阻和电容元件的并联关联相反，从阻抗图中提取了等效电路，该电路采用了恒定相位元件并考虑了陷波状态和频率色散。 IS不仅可以通过使用适当的等效电路模型分析来阐明由于多孔GaAs / GaAs界面而导致的附加电容成分的贡献，而且可以估算结构中每个结点的更可靠的电容值。

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《Journal of Applied Physics》 |2017年第18期|185703.1-185703.8|共8页
作者
Nejeh Hamdaoui; Lotfi Beji;
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Laboratoire des Energies et des Matériaux, LabEM-LR11ES34, Ecole Supérieure des Sciences et de la Technologie, Université de Sousse, Rue Lamine Abessi 4011, Hammam Sousse, Tunisia ,Université de Sousse, Equipe de recherche caractérisations optoelectronique et spectroscopique des matêriaux et nanomatériaux pour les telecommunications et capteurs, ISITCOM 4011, Hammam Sousse, Tunisia;

Laboratoire des Energies et des Matériaux, LabEM-LR11ES34, Ecole Supérieure des Sciences et de la Technologie, Université de Sousse, Rue Lamine Abessi 4011, Hammam Sousse, Tunisia ,Université de Sousse, Equipe de recherche caractérisations optoelectronique et spectroscopique des matêriaux et nanomatériaux pour les telecommunications et capteurs, ISITCOM 4011, Hammam Sousse, Tunisia;

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Electrical characterization and dielectric impedance of Au-CdS/p-porous GaAs/p~(++)-GaAs thin film structures

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