A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

机译：考虑硅-电介质界面取向对围栅器件影响的简单电子迁移模型

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In this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation.

机译：在这项工作中，我们提出了一个简单的迁移率模型，该模型考虑了根据硅-电介质界面的晶体学取向的载流子迁移率的变化。将模拟设备的有效移动性与几种界面取向的实验数据进行了比较，并显示出良好的一致性。该模型已应用于CYNTHIA nMOS晶体管，并允许观察由于电子迁移率变化而在硅柱周围产生的不均匀电流密度。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.179-186|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
A.L. Perin; A.S.N. Pereira; P.G.D. Agopian; J.A. Martino; R. Giacomini;
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Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil,Universidade Metodista de Sao Paulo, S. B. Campo, Sao Paulo, Brazil;

Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil;

Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil,LSI/PSI/USP, University of Sao Paulo, Brazil;

LSI/PSI/USP, University of Sao Paulo, Brazil;

Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil,LSI/PSI/USP, University of Sao Paulo, Brazil;

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正文语种 eng
中图分类半导体技术;
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A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

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