A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

机译：考虑到硅介质界面方向对周围栅极装置的影响的简单电子迁移率模型

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In this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation.

机译：在这项工作中，我们提出了一种简单的移动模型，其考虑了根据硅介质界面的晶体取向的载波移动性的变化。将模拟设备的有效移动性与几种界面方向进行了比较，并显示出良好的一致性。该模型已应用于辛西娅NMOS晶体管，并且允许由于电子迁移率变化观察围绕硅柱的非均匀电流密度。

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《Symposium on Microelectronics Technology and Devices》|2011年||共8页
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A. L. Perin; A. S. N. Pereira; P. G. D. Agopian; J. A. Martino; R. Giacomini;
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2. Modeling effects of interface traps on the gate C-V characteristics of MOS devices on alternative high-mobility substrates [J] . Md. Mahbub Satter, Anisul Haque Solid-State Electronics . 2010,第6期

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4. A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices [C] . A.L. Perin, A.S.N. Pereira, P.G.D. Agopian, Microelectronics technology and devices - SBMicro 2011 . 2011

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A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

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