Industrial Technologies For Ⅲ-Nitride-Based Electronics

机译：Ⅲ族氮化物电子工业技术

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The industrial level technologies including molecular beam epitaxy and submicron planar processing are developed to realize novel electron devices based on III-nitride multilayer heterostructures. Wide conditions range available on growth equipment used as well as flexible heterostructure designs allows controlling of device oriented material properties. For microwave applications, thick AlN "templates" grown at extremely high (up to 1100℃) substrate temperature in conjunction with multilayer transition region design both provide low dislocation density in the order of 10~8 cm~(-2). The strong carrier confinement in two-dimensional electron gas for collapse-free transistor operation is provided by placing GaN channel between AlGaN barriers of various Al content, keeping high sheet conductivity of 260-320 Ohm/square. Based on these heterostructures a number of power amplifiers for L-, S-, C- and X-band are realized. For various types of bulk acoustic resonators, stress-controlling technology of AlN/GaN layers having high depth uniformity on Si substrates is also developed.

机译：开发了包括分子束外延和亚微米平面处理在内的工业级技术，以实现基于III族氮化物多层异质结构的新型电子器件。所使用的生长设备以及灵活的异质结构设计可提供广泛的条件范围，从而可以控制面向设备的材料性能。对于微波应用，在极高的衬底温度（最高1100℃）下生长的厚AlN“模板”与多层过渡区设计相结合，均提供了约10〜8 cm〜（-2）的低位错密度。通过在不同Al含量的AlGaN势垒之间放置GaN沟道，可将二维电子气中的载流子限制在牢固的状态，以实现无塌陷晶体管运行，从而保持260-320欧姆/平方的高薄层电导率。基于这些异质结构，实现了许多用于L波段，S波段，C波段和X波段的功率放大器。对于各种类型的体声谐振器，还开发了在硅衬底上具有高深度均匀性的AlN / GaN层的应力控制技术。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.379-384|共6页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
D. Krasovitsky; A. Alexeev; A. Dudin; S. Kokin; N. Katsavets; V. Chaly;
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作者单位

Svetlana-Rost, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

SemiTEq, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

Svetlana-Rost, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

Svetlana-Rost, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

Svetlana-Rost, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

Svetlana-Rost, JSC, 27 Engels ave., Saint Petersburg, 194156, Russia;

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正文语种 eng
中图分类半导体技术;
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Industrial Technologies For Ⅲ-Nitride-Based Electronics

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