Technological Aspects and Simulation of efficient Solar Cells based on In_(1-x)Ga_x N thin Films, deposited by Molecular Beam Epitaxy

机译：分子束外延沉积基于In_（1-x）Ga_x N薄膜的高效太阳能电池的技术和仿真

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Photovoltaic properties of n-In_(1-x)Ga_xN/p-Si,Ge (IGN) heterostructures have been evaluated by device simulation and are compared with the performance of c-Si homojunction solar cells. Best achievable cell performance for tandem cells under AM 1.5 illumination conditions were 18% for p-Ge and up to 27% for n-InGaN/p-Si contacts, achievable under optimum cell design, material quality and operation parameters. It was shown that the quality of the deposited semiconductor films (IGN) determines the solar cell efficiency. Some critical aspects of the IGN growth, as effects of substrate temperature and V/III ratio, using MBE technique were investigated. Possible routes to overcome crucial problems in growth of high quality IGN films are discussed.

机译：n-In_（1-x）Ga_xN / p-Si，Ge（IGN）异质结构的光伏性能已通过器件仿真进行了评估，并与c-Si同质结太阳能电池的性能进行了比较。在AM 1.5光照条件下，串联电池的最佳可实现电池性能对于p-Ge为18％，对于n-InGaN / p-Si触点可达27％，这是在最佳电池设计，材料质量和操作参数下可实现的。结果表明，沉积的半导体膜（IGN）的质量决定了太阳能电池的效率。使用MBE技术研究了IGN生长的一些关键方面，如底物温度和V / III比的影响。讨论了克服高质量IGN薄膜生长中的关键问题的可能途径。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.363-369|共7页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
O. Semchinova; H. Neff; A. Alexeev; D. Krasovitsky; V. Chaly;
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SemiTEq GmbH, Karl Wiechert Allee74 30625 Hannover, Germany;

Federal University at Campina Grande (UFCG) 58109-970 Campina Grande, Pb, Brazil;

SemiTEq JSC, 27 Engels avenue, 194156, Saint-Petersburg, Russia;

Svetlana-Rost JSC, 27 Engels avenue, 194156, Saint-Petersburg, Russia;

Svetlana-Rost JSC, 27 Engels avenue, 194156, Saint-Petersburg, Russia;

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正文语种 eng
中图分类半导体技术;
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Technological Aspects and Simulation of efficient Solar Cells based on In_(1-x)Ga_x N thin Films, deposited by Molecular Beam Epitaxy

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