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Optimization of SU-8 processing for integrated optics

机译:优化SU-8处理集成光学器件

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In order to create high-performance integrated optical components based on polymers, such as on-chip spectrometers for lab-on-a-chip, significant process optimization is needed. Here is reported on the results of investigations concerning two aspects of processing of 40 μm thick coatings of the negative photoresist SU-8: 1) development of a process to remove the edge bead after spin coating, in order to reduce proximity effects in the exposure process, and 2) an investigation of parameters in the baking and exposure steps in order to optimize the lithographic resolution. Both aspects were investigated through design of experiment (DOE) and related statistical analysis. The first DOE investigated the significance of eight process parameters in solvent based edge bead removal (EBR), and involved 51 experiments. The optimized process based on the experimental series reduced the edge bead from approximately 30 μm to less than 1 μm, in effect eliminating it. The second DOE covered six parameters; two in the soft bake step, the exposure time, and three in the post-exposure bake. This DOE contained 64 experiments and resulted in significant resolution improvement. Because of the optimization the trench resolution was improved from a starting point of 6 μm to 2.5 μm, and the ridge resolution improved from 7 μm to 5 μm. As a final outcome the best procedure also results in crack-free films which do not delaminate.
机译:为了创建基于聚合物的高性能集成光学组件,例如用于芯片实验室的芯片上光谱仪,需要进行重大的工艺优化。这里报道了有关处理负型光刻胶SU-8的40μm厚涂层的两个方面的研究结果:1)开发一种在旋涂后去除边缘珠的工艺,以减少曝光中的邻近效应2)研究烘烤和曝光步骤中的参数,以优化光刻分辨率。通过实验设计(DOE)和相关的统计分析研究了这两个方面。第一个DOE研究了八个工艺参数在基于溶剂的边缘珠粒去除(EBR)中的重要性,并涉及51个实验。基于实验系列的优化工艺将边缘珠从大约30μm减小到小于1μm,实际上消除了它。第二个DOE涵盖了六个参数。在软烘烤步骤中,两个是曝光时间,在曝光后烘烤中是三个。该DOE包含64个实验,并显着提高了分辨率。由于优化,沟槽分辨率从起始点6微米提高到2.5微米,而脊的分辨率从7微米提高到5微米。最终的结果是,最好的步骤还可以产生无裂纹的薄膜,且不会分层。

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