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Novel method for fabrication of high efficiency optics for short wavelength radiation

机译:用于短波辐射的高效光学器件的新颖制造方法

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Extreme ultraviolet lithography (EUVL) is the most likely next generation lithography technique which uses radiation near 13.4 nm wavelength. At this short wavelength, most materials readily absorb the radiation, making refractive lens optical systems unusable. We demonstrate a novel method for fabrication of highly efficient optics for extreme ultraviolet (EUV) radiation using focused ion beam (FIB). These optics are based on Fresnel zone plates, similar to those used for x-ray microscopy, but with a geometry to improve the efficiency for EUV radiation. A typical zone plate has concentric rings with a radially decreasing feature size such that the path of light through every second zone to the focus differs by one optical wavelength following the Bragg's Law. An optic with a net efficiency of 21% can be achieved for 13.4 nm radiation using the standard zone plate design with 86 nm thick zones made from Mo and mounted on a 50 nm silicon nitride membrane. Further improvement in the efficiency can be achieved by fabricating blazed zone plates, which can have a net efficiency of 40% when fabricated on a 50 nm silicon nitride membrane. These lenses are cheap to manufacture and easy to align for imaging since it is a single optic. The preliminary data will be presented on the fabrication of both standard and blazed zone plates optimized for EUV radiation.
机译:极紫外光刻(EUVL)是最可能的下一代光刻技术,它使用的波长为13.4 nm。在这种短波长下,大多数材料都容易吸收辐射,从而使折射透镜光学系统无法使用。我们演示了一种新颖的方法,用于使用聚焦离子束(FIB)制造用于极紫外(EUV)辐射的高效光学器件。这些光学元件基于菲涅耳波带片,类似于用于X射线显微镜的菲涅耳带片,但具有可提高EUV辐射效率的几何形状。典型的波带片具有同心环,其特征尺寸沿径向减小,以使通过第二个区域到达焦点的光路遵循布拉格定律相差一个光学波长。使用标准带区板设计,具有86 nm厚的Mo区域并安装在50 nm氮化硅膜上,对于13.4 nm辐射,可以实现净效率为21%的光学元件。效率的进一步提高可以通过制造炽热的波带片来实现,当在50 nm的氮化硅膜上制造时,其净效率可以达到40%。这些透镜制造成本低廉,并且易于对准成像,因为它是单一光学元件。初步数据将在针对EUV辐射进行了优化的标准和闪耀区带的制造中提供。

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