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Atomic layer deposited thin films for micro- and nano-electromechanical systems with applications in short-wavelength adaptive optics.

机译:用于微和纳米机电系统的原子层沉积薄膜,其应用在短波长自适应光学中。

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摘要

This work advances the development of micro- and nano-electromechanical system (MEMS/NEMS) based adaptive optics for short-wavelengths, below 200nm. Multilayer mirrors have been developed for short-wavelengths and are commonly used in macroscale optics. Presently, no functional MEMS/NEMS adaptive optics exists for short wavelengths. This work explores the fabrication of MEMS/NEMS adaptive optics for phase correction at these wavelengths. Phase correction can be achieved in either an analogue manner using a deformable membrane with individually addressable lower electrodes, or digitally with an array of individually addressable piston micromirrors. Atomic layer deposition (ALD) plays a key role in creating both analogue and digital MEMS/NEMS adaptive optics for short wavelengths. ALD is a thin film growth process new to the field of MEMS/NEMS. ALD is used both as a coating and as a structural layer. As a coating, an ALD Al2O3/W x-ray multilayer mirror is added to a released and packaged MEMS piston micromirror array. As a structural layer, ALD Al 2O3 and Al2O3/W multilayer deformable membrane fabrication is explored. Device design and characterization requires knowledge of electrical, optical and mechanical material properties. Measurements of the intrinsic stress in Al2O3 are performed so that this value is available for device characterization. This work presents the first application of ALD multilayer coatings on MEMS for optical applications and the first released ALD NEMS structures.
机译:这项工作推动了基于微和纳米机电系统(MEMS / NEMS)的自适应光学器件的发展,该光学器件适用于200nm以下的短波长。多层反射镜已经开发用于短波长,并且通常用于宏观光学。当前,不存在用于短波长的功能性MEMS / NEMS自适应光学器件。这项工作探索了用于在这些波长下进行相位校正的MEMS / NEMS自适应光学器件的制造。相位校正可以使用带可单独寻址的下部电极的可变形膜以模拟方式实现,也可以使用可单独寻址的活塞微镜阵列以数字方式实现。原子层沉积(ALD)在创建短波长的模拟和数字MEMS / NEMS自适应光学器件中起着关键作用。 ALD是MEMS / NEMS领域新的薄膜生长工艺。 ALD既用作涂层也用作结构层。作为涂层,将ALD Al2O3 / W x射线多层反射镜添加到已发布和包装的MEMS活塞微镜阵列中。作为结构层,探索了ALD Al 2O3和Al2O3 / W多层可变形膜的制造。器件的设计和表征需要了解电气,光学和机械材料的特性。对Al2O3中的固有应力进行测量,以使该值可用于器件表征。这项工作介绍了ALD多层涂层在MEMS光学应用中的首次应用以及首次发布的ALD NEMS结构。

著录项

  • 作者

    Tripp, Marie K.;

  • 作者单位

    University of Colorado at Boulder.;

  • 授予单位 University of Colorado at Boulder.;
  • 学科 Engineering Electronics and Electrical.; Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 220 p.
  • 总页数 220
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;机械、仪表工业;
  • 关键词

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