• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Micro/Nanoscale Heat Transfer International Conference 2008 >THE DEVELOPMENT OF THE MICRO-GENERATOR ON THE SUBSTRATE BASED THIN FILM
【24h】

THE DEVELOPMENT OF THE MICRO-GENERATOR ON THE SUBSTRATE BASED THIN FILM

机译：基于基体薄膜的微型发电机的开发

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We fabricated bismuth-telluride based thin films and their in-plane thermoelectric micro-generators (4mm×4mm) on a glass substrate by using the flash evaporation method through shadow masks. We prepared fine powders of Bi_(2.0)Te_(2.7)Se_(0.3) (n-type) and Bi_(0.4)Te_(3.0)Sb_(1.6) (p-type). The shadow masks are fabricated by standard micro-fabrication processes such as nitridation of silicon, dry etching and wet etching. The output voltages of micro-generators are lower than that of a thermoelectric generator based on bulk materials. The main reason is because the temperature difference between cool and hot junctions of the micro-generator is small compared to a thermoelectric generator based on bulk materials. In this study, the micro-generators were fabricated on a silicon nitride substrate based thin film. By fabricating the micro-generator on the thin film substrate, a large temperature difference between cool and hot junctions is obtained due to the thin film effect and the heat radiation to air of the thin film substrate. At the silicon nitride substrate based thin films, the thermal conductivity is significantly reduced by 1.2 W/ (m K). The thin film substrate is prepared by applying the fabrication processes used for shadow masks. The silicon nitride substrate based thin film is fabricated by nitridation of silicon and then back etching the silicon wafer. The fabricated substrate thickness is 2.5 μm and 4.5 μm (4 mm×4 mm). The temperature between cool and hot junctions is measured by using the noncontact thermometer which senses the far-infrared radiation. The output voltage of the micro-generator based thin film is measured by giving a temperature difference by heating the bottom of the silicon nitride substrate based thin film.
机译：我们通过通过荫罩的闪蒸方法在玻璃基板上制备了基于碲化铋的薄膜及其面内热电微型发生器（4mm×4mm）。我们制备了Bi_（2.0）Te_（2.7）Se_（0.3）（n型）和Bi_（0.4）Te_（3.0）Sb_（1.6）（p型）的细粉。荫罩是通过标准的微制造工艺制造的，例如硅的氮化，干法蚀刻和湿法蚀刻。微型发电机的输出电压低于基于散装材料的热电发电机的输出电压。主要原因是因为与基于散装材料的热电发电机相比，微型发电机的冷结和热结之间的温差较小。在这项研究中，微型发电机是在基于氮化硅衬底的薄膜上制造的。通过在薄膜基板上制造微型发电机，由于薄膜效应和薄膜基板向空气的热辐射，在冷结和热结之间获得大的温差。在基于氮化硅衬底的薄膜上，热导率显着降低了1.2 W /（m K）。通过应用用于荫罩的制造工艺来制备薄膜基板。通过氮化硅并随后回蚀硅晶片来制造基于氮化硅衬底的薄膜。所制造的基板厚度为2.5μm和4.5μm（4mm×4mm）。冷端和热端之间的温度通过使用可感应远红外辐射的非接触式温度计进行测量。基于微型发电机的薄膜的输出电压通过加热基于氮化硅衬底的薄膜的底部来给出温度差来测量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号