STEM investigations of GaN

机译：GaN的STEM研究

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The low energy loss region of electron energy loss (EEL) spectra of hcp and cubic GaN is investigated.the joint density of states times the matrix element curves show differences between the hcp and cubic phase.Possible effects of individual dislocations on the energy loss intensity in the interband scattering regime in EEL spectra will be highly localized.Relying on the high spatial resolution of this technique and in spite of the low intensities in the interband scattering regime we investigate this possibility.For the case of screw dislocations in hcp and of perfect dislocations in cubic material distinct differences in the intensity of pre-bandedge states could be detected.

机译：研究了hcp和立方GaN的电子能量损失谱的低能量损失区域。状态的联合密度乘以基质元素曲线显示hcp和立方相之间的差异。单个位错对能量损失强度的可能影响在EEL光谱中，带间散射区的位错将高度局限。尽管这项技术具有较高的空间分辨率，但尽管带间散射区的强度较低，但我们仍在研究这种可能性。立方材料中的位错可以检测到带前态强度的明显差异。

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《Microscopy of semiconducting materials 1999》|1999年|p.349-352|共4页
会议地点 Oxford(GB);Oxford(GB)
作者
U Bangert; A J Harvey; C Dieker; A Rizzi; D Freundt; H Davock;
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正文语种 eng
中图分类机械、仪表工业;
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STEM investigations of GaN

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